High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

J. Kirdoda; L. Ferre Llin; K. Kuzmenko; P. Vines; Z. Greener; D. C. S. Dumas; R. W. Millar; M. M. Mirza; G. S. Buller; D. J. Paul

doi:10.1364/CLEO-QELS.2019.FF1A.4

High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

J. Kirdoda
, L. Ferre Llin
, K. Kuzmenko
, P. Vines
, Z. Greener
, D. C. S. Dumas
, R. W. Millar
, M. M. Mirza
, G. S. Buller
, D. J. Paul^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Abstract

Planar Ge-on-Si single-photon avalanche diode detectors fabricated using CMOS-compatible processing demonstrate a 38% single photon detection efficiency at 125 K with 1310 nm wavelength illumination, exhibiting 310 ps jitter and 2× 10^-16 WHz^-1/2noise equivalent power.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	QELS_Fundamental Science 2019
Publisher	OSA Publishing
ISBN (Electronic)	9781943580576
DOIs	https://doi.org/10.1364/CLEO-QELS.2019.FF1A.4
Publication status	Published - 5 May 2019
Event	CLEO: QELS Fundamental Science 2019 - San Jose, United States Duration: 5 May 2019 → 10 May 2019

Conference

Conference	CLEO: QELS Fundamental Science 2019
Country/Territory	United States
City	San Jose
Period	5/05/19 → 10/05/19

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

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10.1364/CLEO-QELS.2019.FF1A.4

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@inproceedings{4fcd7174e37b4259bb3c926a6c980f8d,

title = "High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors",

abstract = "Planar Ge-on-Si single-photon avalanche diode detectors fabricated using CMOS-compatible processing demonstrate a 38\% single photon detection efficiency at 125 K with 1310 nm wavelength illumination, exhibiting 310 ps jitter and 2{\texttimes} 10-16 WHz-1/2noise equivalent power.",

author = "J. Kirdoda and \{Ferre Llin\}, L. and K. Kuzmenko and P. Vines and Z. Greener and Dumas, \{D. C. S.\} and Millar, \{R. W.\} and Mirza, \{M. M.\} and Buller, \{G. S.\} and Paul, \{D. J.\}",

year = "2019",

month = may,

day = "5",

doi = "10.1364/CLEO-QELS.2019.FF1A.4",

language = "English",

booktitle = "CLEO",

publisher = "OSA Publishing",

address = "United States",

note = "CLEO: QELS Fundamental Science 2019 ; Conference date: 05-05-2019 Through 10-05-2019",

}

Kirdoda, J, Ferre Llin, L, Kuzmenko, K, Vines, P, Greener, Z, Dumas, DCS, Millar, RW, Mirza, MM, Buller, GS & Paul, DJ 2019, High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors. in CLEO: QELS_Fundamental Science 2019., FF1A.4, OSA Publishing, CLEO: QELS Fundamental Science 2019, San Jose, United States, 5/05/19. https://doi.org/10.1364/CLEO-QELS.2019.FF1A.4

TY - GEN

T1 - High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

AU - Kirdoda, J.

AU - Ferre Llin, L.

AU - Kuzmenko, K.

AU - Vines, P.

AU - Greener, Z.

AU - Dumas, D. C. S.

AU - Millar, R. W.

AU - Mirza, M. M.

AU - Buller, G. S.

AU - Paul, D. J.

PY - 2019/5/5

Y1 - 2019/5/5

N2 - Planar Ge-on-Si single-photon avalanche diode detectors fabricated using CMOS-compatible processing demonstrate a 38% single photon detection efficiency at 125 K with 1310 nm wavelength illumination, exhibiting 310 ps jitter and 2× 10-16 WHz-1/2noise equivalent power.

AB - Planar Ge-on-Si single-photon avalanche diode detectors fabricated using CMOS-compatible processing demonstrate a 38% single photon detection efficiency at 125 K with 1310 nm wavelength illumination, exhibiting 310 ps jitter and 2× 10-16 WHz-1/2noise equivalent power.

UR - https://www.scopus.com/pages/publications/85068222161

U2 - 10.1364/CLEO-QELS.2019.FF1A.4

DO - 10.1364/CLEO-QELS.2019.FF1A.4

M3 - Conference contribution

AN - SCOPUS:85068222161

BT - CLEO

PB - OSA Publishing

T2 - CLEO: QELS Fundamental Science 2019

Y2 - 5 May 2019 through 10 May 2019

ER -

High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

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ASJC Scopus subject areas

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