High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

J. Kirdoda, L. Ferre Llin, K. Kuzmenko, P. Vines, Z. Greener, D. C. S. Dumas, R. W. Millar, M. M. Mirza, G. S. Buller, D. J. Paul

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

Planar Ge-on-Si single-photon avalanche diode detectors fabricated using CMOS-compatible processing demonstrate a 38% single photon detection efficiency at 125 K with 1310 nm wavelength illumination, exhibiting 310 ps jitter and 2× 10-16 WHz-1/2noise equivalent power.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationQELS_Fundamental Science 2019
PublisherOptical Society of America
ISBN (Electronic)9781943580576
DOIs
Publication statusPublished - 5 May 2019
EventCLEO: QELS Fundamental Science 2019 - San Jose, United States
Duration: 5 May 201910 May 2019

Conference

ConferenceCLEO: QELS Fundamental Science 2019
CountryUnited States
CitySan Jose
Period5/05/1910/05/19

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ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials

Cite this

Kirdoda, J., Ferre Llin, L., Kuzmenko, K., Vines, P., Greener, Z., Dumas, D. C. S., Millar, R. W., Mirza, M. M., Buller, G. S., & Paul, D. J. (2019). High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors. In CLEO: QELS_Fundamental Science 2019 [FF1A.4] Optical Society of America. https://doi.org/10.1364/CLEO-QELS.2019.FF1A.4