High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

J. Kirdoda; L. Ferre Llin; K. Kuzmenko; P. Vines; Z. Greener; D. C. S. Dumas; R. W. Millar; M. M. Mirza; G. S. Buller; D. J. Paul

doi:10.1364/CLEO-QELS.2019.FF1A.4

High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

J. Kirdoda, L. Ferre Llin, K. Kuzmenko, P. Vines, Z. Greener, D. C. S. Dumas, R. W. Millar, M. M. Mirza, G. S. Buller, D. J. Paul^*

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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Abstract

Planar Ge-on-Si single-photon avalanche diode detectors fabricated using CMOS-compatible processing demonstrate a 38% single photon detection efficiency at 125 K with 1310 nm wavelength illumination, exhibiting 310 ps jitter and 2× 10^-16 WHz^-1/2noise equivalent power.

Original language	English
Title of host publication	CLEO
Subtitle of host publication	QELS_Fundamental Science 2019
Publisher	OSA Publishing
ISBN (Electronic)	9781943580576
DOIs	https://doi.org/10.1364/CLEO-QELS.2019.FF1A.4
Publication status	Published - 5 May 2019
Event	CLEO: QELS Fundamental Science 2019 - San Jose, United States Duration: 5 May 2019 → 10 May 2019

Conference

Conference	CLEO: QELS Fundamental Science 2019
Country/Territory	United States
City	San Jose
Period	5/05/19 → 10/05/19

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Mechanics of Materials

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10.1364/CLEO-QELS.2019.FF1A.4

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title = "High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors",

abstract = "Planar Ge-on-Si single-photon avalanche diode detectors fabricated using CMOS-compatible processing demonstrate a 38% single photon detection efficiency at 125 K with 1310 nm wavelength illumination, exhibiting 310 ps jitter and 2× 10-16 WHz-1/2noise equivalent power.",

author = "J. Kirdoda and {Ferre Llin}, L. and K. Kuzmenko and P. Vines and Z. Greener and Dumas, {D. C. S.} and Millar, {R. W.} and Mirza, {M. M.} and Buller, {G. S.} and Paul, {D. J.}",

year = "2019",

month = may,

day = "5",

doi = "10.1364/CLEO-QELS.2019.FF1A.4",

language = "English",

booktitle = "CLEO",

publisher = "OSA Publishing",

address = "United States",

note = "CLEO: QELS Fundamental Science 2019 ; Conference date: 05-05-2019 Through 10-05-2019",

}

Kirdoda, J, Ferre Llin, L, Kuzmenko, K, Vines, P, Greener, Z, Dumas, DCS, Millar, RW, Mirza, MM, Buller, GS & Paul, DJ 2019, High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors. in CLEO: QELS_Fundamental Science 2019., FF1A.4, OSA Publishing, CLEO: QELS Fundamental Science 2019, San Jose, United States, 5/05/19. https://doi.org/10.1364/CLEO-QELS.2019.FF1A.4

TY - GEN

T1 - High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

AU - Kirdoda, J.

AU - Ferre Llin, L.

AU - Kuzmenko, K.

AU - Vines, P.

AU - Greener, Z.

AU - Dumas, D. C. S.

AU - Millar, R. W.

AU - Mirza, M. M.

AU - Buller, G. S.

AU - Paul, D. J.

PY - 2019/5/5

Y1 - 2019/5/5

N2 - Planar Ge-on-Si single-photon avalanche diode detectors fabricated using CMOS-compatible processing demonstrate a 38% single photon detection efficiency at 125 K with 1310 nm wavelength illumination, exhibiting 310 ps jitter and 2× 10-16 WHz-1/2noise equivalent power.

AB - Planar Ge-on-Si single-photon avalanche diode detectors fabricated using CMOS-compatible processing demonstrate a 38% single photon detection efficiency at 125 K with 1310 nm wavelength illumination, exhibiting 310 ps jitter and 2× 10-16 WHz-1/2noise equivalent power.

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U2 - 10.1364/CLEO-QELS.2019.FF1A.4

DO - 10.1364/CLEO-QELS.2019.FF1A.4

M3 - Conference contribution

AN - SCOPUS:85068222161

BT - CLEO

PB - OSA Publishing

T2 - CLEO: QELS Fundamental Science 2019

Y2 - 5 May 2019 through 10 May 2019

ER -

High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

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