High Efficiency Planar Ge-on-Si Single-Photon Avalanche Diode Detectors

J. Kirdoda, L. Ferre Llin, K. Kuzmenko, P. Vines, Z. Greener, D. C. S. Dumas, R. W. Millar, M. M. Mirza, G. S. Buller, D. J. Paul*

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Planar Ge-on-Si single-photon avalanche diode detectors fabricated using CMOS-compatible processing demonstrate a 38% single photon detection efficiency at 125 K with 1310 nm wavelength illumination, exhibiting 310 ps jitter and 2× 10-16 WHz-1/2noise equivalent power.

Original languageEnglish
Title of host publicationCLEO
Subtitle of host publicationQELS_Fundamental Science 2019
PublisherOSA Publishing
ISBN (Electronic)9781943580576
Publication statusPublished - 5 May 2019
EventCLEO: QELS Fundamental Science 2019 - San Jose, United States
Duration: 5 May 201910 May 2019


ConferenceCLEO: QELS Fundamental Science 2019
Country/TerritoryUnited States
CitySan Jose

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Mechanics of Materials


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