High-efficiency Ge-on-Si SPADs for short-wave infrared

Derek C. S. Dumas, Jarosław Kirdoda, Ross W. Millar, Peter Vines, Kateryna Kuzmenko, Gerald S. Buller, Douglas J. Paul

Research output: Chapter in Book/Report/Conference proceedingConference contribution

4 Citations (Scopus)
114 Downloads (Pure)


High efficiency, Ge-on-Si single-photon avalanche diode (SPAD) detectors operating in the short-wave infrared region (1310 nm-1550 nm) at near room temperature have the potential to be used for numerous emerging applications, including quantum communications, quantum imaging and eye-safe LIDAR applications. In this work, planar geometry Ge-on-Si SPAD designs demonstrate a significant decrease in the dark count rate compared to previous generations of Ge-on-Si detectors. 100 μm diameter microfabricated SPADs demonstrate record low NEPs of 2.2×10-16 WHz-1/2 , and single-photon detection efficiencies of 18% for 1310 nm at 78 K. The devices demonstrate single-photon detection at temperatures up to 175 K.

Original languageEnglish
Title of host publicationOptical Components and Materials XVI
EditorsMichel J. F. Digonnet, Shibin Jiang
ISBN (Electronic)9781510624719
ISBN (Print)9781510624702
Publication statusPublished - 27 Feb 2019
EventSPIE OPTO 2019 - San Francisco, United States
Duration: 4 Feb 20196 Feb 2019

Publication series

NameProceedings of SPIE
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X


ConferenceSPIE OPTO 2019
Country/TerritoryUnited States
CitySan Francisco


  • Ge-on-Si
  • Planar
  • Single-Photon
  • SPAD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering


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