@inproceedings{b42d195b16064fe28544193a21f62321,
title = "High-efficiency Ge-on-Si SPADs for short-wave infrared",
abstract = " High efficiency, Ge-on-Si single-photon avalanche diode (SPAD) detectors operating in the short-wave infrared region (1310 nm-1550 nm) at near room temperature have the potential to be used for numerous emerging applications, including quantum communications, quantum imaging and eye-safe LIDAR applications. In this work, planar geometry Ge-on-Si SPAD designs demonstrate a significant decrease in the dark count rate compared to previous generations of Ge-on-Si detectors. 100 μm diameter microfabricated SPADs demonstrate record low NEPs of 2.2×10-16 WHz-1/2 , and single-photon detection efficiencies of 18% for 1310 nm at 78 K. The devices demonstrate single-photon detection at temperatures up to 175 K. ",
keywords = "Ge-on-Si, Planar, Single-Photon, SPAD",
author = "Dumas, {Derek C. S.} and Jaros{\l}aw Kirdoda and Millar, {Ross W.} and Peter Vines and Kateryna Kuzmenko and Buller, {Gerald S.} and Paul, {Douglas J.}",
year = "2019",
month = feb,
day = "27",
doi = "10.1117/12.2521067",
language = "English",
isbn = "9781510624702",
series = "Proceedings of SPIE",
publisher = "SPIE",
editor = "Digonnet, {Michel J. F.} and Shibin Jiang",
booktitle = "Optical Components and Materials XVI",
address = "United States",
note = "SPIE OPTO 2019 ; Conference date: 04-02-2019 Through 06-02-2019",
}