High-efficiency Ge-on-Si SPADs for short-wave infrared

Derek C. S. Dumas, Jarosław Kirdoda, Ross W. Millar, Peter Vines, Kateryna Kuzmenko, Gerald S. Buller, Douglas J. Paul

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

High efficiency, Ge-on-Si single-photon avalanche diode (SPAD) detectors operating in the short-wave infrared region (1310 nm-1550 nm) at near room temperature have the potential to be used for numerous emerging applications, including quantum communications, quantum imaging and eye-safe LIDAR applications. In this work, planar geometry Ge-on-Si SPAD designs demonstrate a significant decrease in the dark count rate compared to previous generations of Ge-on-Si detectors. 100 μm diameter microfabricated SPADs demonstrate record low NEPs of 2.2×10-16 WHz-1/2 , and single-photon detection efficiencies of 18% for 1310 nm at 78 K. The devices demonstrate single-photon detection at temperatures up to 175 K.

Original languageEnglish
Title of host publicationOptical Components and Materials XVI
EditorsMichel J. F. Digonnet, Shibin Jiang
PublisherSPIE
ISBN (Electronic)9781510624719
ISBN (Print)9781510624702
DOIs
Publication statusPublished - 27 Feb 2019
EventSPIE OPTO 2019 - San Francisco, United States
Duration: 4 Feb 20196 Feb 2019

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume10914
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSPIE OPTO 2019
CountryUnited States
CitySan Francisco
Period4/02/196/02/19

Fingerprint

Single Photon Avalanche Diode
High Efficiency
Infrared
Photons
Avalanche diodes
Infrared radiation
avalanche diodes
Photon
photons
Detector
Demonstrate
Quantum Communication
Quantum communication
Detectors
quantum communication
detectors
Count
Imaging
emerging
Decrease

Keywords

  • Ge-on-Si
  • Planar
  • Single-Photon
  • SPAD

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

Cite this

Dumas, D. C. S., Kirdoda, J., Millar, R. W., Vines, P., Kuzmenko, K., Buller, G. S., & Paul, D. J. (2019). High-efficiency Ge-on-Si SPADs for short-wave infrared. In M. J. F. Digonnet, & S. Jiang (Eds.), Optical Components and Materials XVI [1091424] (Proceedings of SPIE; Vol. 10914). SPIE. https://doi.org/10.1117/12.2521067
Dumas, Derek C. S. ; Kirdoda, Jarosław ; Millar, Ross W. ; Vines, Peter ; Kuzmenko, Kateryna ; Buller, Gerald S. ; Paul, Douglas J. / High-efficiency Ge-on-Si SPADs for short-wave infrared. Optical Components and Materials XVI. editor / Michel J. F. Digonnet ; Shibin Jiang. SPIE, 2019. (Proceedings of SPIE).
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abstract = "High efficiency, Ge-on-Si single-photon avalanche diode (SPAD) detectors operating in the short-wave infrared region (1310 nm-1550 nm) at near room temperature have the potential to be used for numerous emerging applications, including quantum communications, quantum imaging and eye-safe LIDAR applications. In this work, planar geometry Ge-on-Si SPAD designs demonstrate a significant decrease in the dark count rate compared to previous generations of Ge-on-Si detectors. 100 μm diameter microfabricated SPADs demonstrate record low NEPs of 2.2×10-16 WHz-1/2 , and single-photon detection efficiencies of 18{\%} for 1310 nm at 78 K. The devices demonstrate single-photon detection at temperatures up to 175 K.",
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Dumas, DCS, Kirdoda, J, Millar, RW, Vines, P, Kuzmenko, K, Buller, GS & Paul, DJ 2019, High-efficiency Ge-on-Si SPADs for short-wave infrared. in MJF Digonnet & S Jiang (eds), Optical Components and Materials XVI., 1091424, Proceedings of SPIE, vol. 10914, SPIE, SPIE OPTO 2019, San Francisco, United States, 4/02/19. https://doi.org/10.1117/12.2521067

High-efficiency Ge-on-Si SPADs for short-wave infrared. / Dumas, Derek C. S.; Kirdoda, Jarosław; Millar, Ross W.; Vines, Peter; Kuzmenko, Kateryna; Buller, Gerald S.; Paul, Douglas J.

Optical Components and Materials XVI. ed. / Michel J. F. Digonnet; Shibin Jiang. SPIE, 2019. 1091424 (Proceedings of SPIE; Vol. 10914).

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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AB - High efficiency, Ge-on-Si single-photon avalanche diode (SPAD) detectors operating in the short-wave infrared region (1310 nm-1550 nm) at near room temperature have the potential to be used for numerous emerging applications, including quantum communications, quantum imaging and eye-safe LIDAR applications. In this work, planar geometry Ge-on-Si SPAD designs demonstrate a significant decrease in the dark count rate compared to previous generations of Ge-on-Si detectors. 100 μm diameter microfabricated SPADs demonstrate record low NEPs of 2.2×10-16 WHz-1/2 , and single-photon detection efficiencies of 18% for 1310 nm at 78 K. The devices demonstrate single-photon detection at temperatures up to 175 K.

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Dumas DCS, Kirdoda J, Millar RW, Vines P, Kuzmenko K, Buller GS et al. High-efficiency Ge-on-Si SPADs for short-wave infrared. In Digonnet MJF, Jiang S, editors, Optical Components and Materials XVI. SPIE. 2019. 1091424. (Proceedings of SPIE). https://doi.org/10.1117/12.2521067