High density indium bumping using electrodeposition enhanced by megasonic agitation

Yingtao Tian, Changqing Liu, David Hutt, Bob Stevens, David Flynn, M. P Y Desmulliez

Research output: Chapter in Book/Report/Conference proceedingConference contribution

5 Citations (Scopus)

Abstract

Electrodeposition has been utilized to fulfill the demand of high density indium bumping used in high energy physics applications. Previous studies have shown the capability of electrodeposition to achieve high yield and high density indium bumps. The challenge exists to improve the bump height uniformity and consistency of electroplated indium bumps across the wafer at ultra-fine pitches with the highest yield. This paper reports progress towards the electroplating indium bumping process assisted by megasonic agitation. Electroplating of indium onto non-patterned substrates was initially conducted to investigate the performance of the solution with megasonic agitation. Further trials were carried out on 4 inch silicon dummy wafers to create indium bumps at 50 µm pitch. The results reflect that bubbles created during the plating process with megasonic agitation can affect the quality of the deposit and the yield of indium bumping, under the experimental conditions used in this study. ©2009 IEEE.

Original languageEnglish
Title of host publicationEPTC 2009 - Proceedings of 2009 11th Electronic Packaging Technology Conference
Pages31-35
Number of pages5
DOIs
Publication statusPublished - 2009
Event2009 11th Electronic Packaging Technology Conference - Singapore, Singapore
Duration: 9 Dec 200911 Dec 2009

Conference

Conference2009 11th Electronic Packaging Technology Conference
Abbreviated titleEPTC 2009
Country/TerritorySingapore
CitySingapore
Period9/12/0911/12/09

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