High bandwidth investigations of a baseband linearization approach formulated in the envelope domain under modulated stimulus

F. L. Ogboi; P. J. Tasker; M. Akmal; J. Lees; J. Benedikt; S. Ben Smida; K. Morris; M. Beach; J. McGeehan

doi:10.1109/EuMIC.2014.6997867

High bandwidth investigations of a baseband linearization approach formulated in the envelope domain under modulated stimulus

F. L. Ogboi, P. J. Tasker, M. Akmal, J. Lees, J. Benedikt, S. Ben Smida, K. Morris, M. Beach, J. McGeehan

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

2 Citations (Scopus)

Abstract

Baseband injection provides a useful approach for use in linearizing power amplifiers. The challenge is the determination of the required baseband signal. In [6] a generalized formulation quantifying the baseband voltage signal, injected at the output bias port, to linearize the device behavior was introduced. This envelope domain based solution requires the determination of only a small number of linearizing coefficients. More importantly these coefficients should be stimulus, hence bandwidth independent. This property has been experimentally investigated using a 10W Cree GaN HEMT device under a 3-tone modulated stimulus at 1.5dB of compression. It will be shown that the linearization coefficients were invariant when varying the modulation bandwidth from 2MHz to 20MHz.

Original language	English
Title of host publication	2014 9th European Microwave Integrated Circuit Conference
Publisher	IEEE
Pages	361-364
Number of pages	4
ISBN (Electronic)	9782874870361
DOIs	https://doi.org/10.1109/EuMIC.2014.6997867
Publication status	Published - 29 Dec 2014

Keywords

bandwidth
distortion
independence
modulation

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Ogboi, F. L., Tasker, P. J., Akmal, M., Lees, J., Benedikt, J., Ben Smida, S., Morris, K., Beach, M., & McGeehan, J. (2014). High bandwidth investigations of a baseband linearization approach formulated in the envelope domain under modulated stimulus. In 2014 9th European Microwave Integrated Circuit Conference (pp. 361-364). IEEE. https://doi.org/10.1109/EuMIC.2014.6997867

@inproceedings{c3b3f5f4a7844af5ba78fbd47b2b7b5b,

title = "High bandwidth investigations of a baseband linearization approach formulated in the envelope domain under modulated stimulus",

abstract = "Baseband injection provides a useful approach for use in linearizing power amplifiers. The challenge is the determination of the required baseband signal. In [6] a generalized formulation quantifying the baseband voltage signal, injected at the output bias port, to linearize the device behavior was introduced. This envelope domain based solution requires the determination of only a small number of linearizing coefficients. More importantly these coefficients should be stimulus, hence bandwidth independent. This property has been experimentally investigated using a 10W Cree GaN HEMT device under a 3-tone modulated stimulus at 1.5dB of compression. It will be shown that the linearization coefficients were invariant when varying the modulation bandwidth from 2MHz to 20MHz.",

keywords = "bandwidth, distortion, independence, modulation",

author = "Ogboi, {F. L.} and Tasker, {P. J.} and M. Akmal and J. Lees and J. Benedikt and {Ben Smida}, S. and K. Morris and M. Beach and J. McGeehan",

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doi = "10.1109/EuMIC.2014.6997867",

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AU - Ogboi, F. L.

AU - Tasker, P. J.

AU - Akmal, M.

AU - Lees, J.

AU - Benedikt, J.

AU - Ben Smida, S.

AU - Morris, K.

AU - Beach, M.

AU - McGeehan, J.

PY - 2014/12/29

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N2 - Baseband injection provides a useful approach for use in linearizing power amplifiers. The challenge is the determination of the required baseband signal. In [6] a generalized formulation quantifying the baseband voltage signal, injected at the output bias port, to linearize the device behavior was introduced. This envelope domain based solution requires the determination of only a small number of linearizing coefficients. More importantly these coefficients should be stimulus, hence bandwidth independent. This property has been experimentally investigated using a 10W Cree GaN HEMT device under a 3-tone modulated stimulus at 1.5dB of compression. It will be shown that the linearization coefficients were invariant when varying the modulation bandwidth from 2MHz to 20MHz.

AB - Baseband injection provides a useful approach for use in linearizing power amplifiers. The challenge is the determination of the required baseband signal. In [6] a generalized formulation quantifying the baseband voltage signal, injected at the output bias port, to linearize the device behavior was introduced. This envelope domain based solution requires the determination of only a small number of linearizing coefficients. More importantly these coefficients should be stimulus, hence bandwidth independent. This property has been experimentally investigated using a 10W Cree GaN HEMT device under a 3-tone modulated stimulus at 1.5dB of compression. It will be shown that the linearization coefficients were invariant when varying the modulation bandwidth from 2MHz to 20MHz.

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KW - independence

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M3 - Conference contribution

SP - 361

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BT - 2014 9th European Microwave Integrated Circuit Conference

PB - IEEE

ER -

High bandwidth investigations of a baseband linearization approach formulated in the envelope domain under modulated stimulus

Abstract

Keywords

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