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Growth rate and morphology for ceramic films by pulsed-MOCVD
Susan Krumdieck
*
, Rishi Raj
*
Corresponding author for this work
School of Energy, Geoscience, Infrastructure and Society
Institute for Life and Earth Sciences
University of Colorado at Boulder
Research output
:
Contribution to journal
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Article
›
peer-review
35
Citations (Scopus)
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Engineering
Growth Rate
83%
Injection Rate
50%
Temperature
50%
High Temperature
50%
Microstructure
33%
Measurement
16%
Atomisation
16%
Arrhenius
16%
Ultrasonics
16%
Thickness Measurement
16%
Optical Microscope
16%
Dilute Solution
16%
Deposition System
16%
Substrates
16%
Low Pressure
16%
Deposition Parameter
16%
Situ Observation
16%
Susceptor
16%
Physics
Growth Rate
83%
High Temperature
50%
Temperature
50%
Microstructure
33%
Atomizing
16%
Scanning Electron Microscopy
16%
Uranian Satellites
16%
Film Thickness
16%
Metalorganic Chemical Vapor Deposition
16%
Substrates
16%
Liquids
16%
Behavior
16%
Calculation
16%
Colour
16%
Injection
16%
Ceramics
16%
Crystals
16%
Nickel
16%
Titanium
16%
Material Science
Liquid Films
100%
Growth Rate
83%
X-Ray Diffraction
50%
Morphology
33%
Film Growth
33%
Microstructure
33%
Liquid
16%
Crystal
16%
Chemistry
Liquid Film
100%
Reaction Temperature
50%
Metallorganic Chemical Vapor Deposition
50%
Microstructure
33%
Scanning Electron Microscopy
16%
Toluene
16%
Liquid
16%
Procedure
16%
Crystalline Material
16%
Rate
16%
Reactor
16%