Growth of ZnSe and ZnCdSe on (211)B GaAs substrates

S. A. Telfer; G. Horsburgh; J S Milnes; Christian Morhain; P. J. Thompson; K. A. Prior; B. C. Cavenett

doi:10.1016/S0022-0248(98)80292-3

Growth of ZnSe and ZnCdSe on (211)B GaAs substrates

S. A. Telfer, G. Horsburgh, J S Milnes, Christian Morhain, P. J. Thompson, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

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7 Citations (Scopus)

Abstract

This paper reports on the growth of ZnSe and ZnCdSe epilayers on GaAs(2 1 1)B substrates by molecular beam epitaxy. The layer quality, as determined by the PL spectra, depends critically on the reconstruction of the GaAs surface before growth. Two surface reconstructions are suggested for the (2 1 1)B surface which correspond to the two different corrugation heights that are observed by RHEED. For ZnCdSe there is a correlation between the surface reconstruction, growth temperature and epilayer quality, while for ZnSe the correlation is less clear. One of the surface reconstructions is clearly associated with twinning and the break-up of the surface into facets. © 1998 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	51-56
Number of pages	6
Journal	Journal of Crystal Growth
Volume	184-185
DOIs	https://doi.org/10.1016/S0022-0248(98)80292-3
Publication status	Published - Feb 1998

Keywords

(2 1 1)B
MBE
Reconstruction
RHEED
ZnCdSe
ZnSe

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10.1016/S0022-0248(98)80292-3

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@article{3f00ce9e1a8d40bc808250167d499fa1,

title = "Growth of ZnSe and ZnCdSe on (211)B GaAs substrates",

abstract = "This paper reports on the growth of ZnSe and ZnCdSe epilayers on GaAs(2 1 1)B substrates by molecular beam epitaxy. The layer quality, as determined by the PL spectra, depends critically on the reconstruction of the GaAs surface before growth. Two surface reconstructions are suggested for the (2 1 1)B surface which correspond to the two different corrugation heights that are observed by RHEED. For ZnCdSe there is a correlation between the surface reconstruction, growth temperature and epilayer quality, while for ZnSe the correlation is less clear. One of the surface reconstructions is clearly associated with twinning and the break-up of the surface into facets. {\textcopyright} 1998 Elsevier Science B.V. All rights reserved.",

keywords = "(2 1 1)B, MBE, Reconstruction, RHEED, ZnCdSe, ZnSe",

author = "Telfer, {S. A.} and G. Horsburgh and Milnes, {J S} and Christian Morhain and Thompson, {P. J.} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1998",

month = feb,

doi = "10.1016/S0022-0248(98)80292-3",

language = "English",

volume = "184-185",

pages = "51--56",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Growth of ZnSe and ZnCdSe on (211)B GaAs substrates

AU - Telfer, S. A.

AU - Horsburgh, G.

AU - Milnes, J S

AU - Morhain, Christian

AU - Thompson, P. J.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1998/2

Y1 - 1998/2

N2 - This paper reports on the growth of ZnSe and ZnCdSe epilayers on GaAs(2 1 1)B substrates by molecular beam epitaxy. The layer quality, as determined by the PL spectra, depends critically on the reconstruction of the GaAs surface before growth. Two surface reconstructions are suggested for the (2 1 1)B surface which correspond to the two different corrugation heights that are observed by RHEED. For ZnCdSe there is a correlation between the surface reconstruction, growth temperature and epilayer quality, while for ZnSe the correlation is less clear. One of the surface reconstructions is clearly associated with twinning and the break-up of the surface into facets. © 1998 Elsevier Science B.V. All rights reserved.

AB - This paper reports on the growth of ZnSe and ZnCdSe epilayers on GaAs(2 1 1)B substrates by molecular beam epitaxy. The layer quality, as determined by the PL spectra, depends critically on the reconstruction of the GaAs surface before growth. Two surface reconstructions are suggested for the (2 1 1)B surface which correspond to the two different corrugation heights that are observed by RHEED. For ZnCdSe there is a correlation between the surface reconstruction, growth temperature and epilayer quality, while for ZnSe the correlation is less clear. One of the surface reconstructions is clearly associated with twinning and the break-up of the surface into facets. © 1998 Elsevier Science B.V. All rights reserved.

KW - (2 1 1)B

KW - MBE

KW - Reconstruction

KW - RHEED

KW - ZnCdSe

KW - ZnSe

U2 - 10.1016/S0022-0248(98)80292-3

DO - 10.1016/S0022-0248(98)80292-3

M3 - Article

SN - 0022-0248

VL - 184-185

SP - 51

EP - 56

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Growth of ZnSe and ZnCdSe on (211)B GaAs substrates

Abstract

Keywords

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