Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP

K. A. Prior, S. A. Telfer, X. Tang, Christian Morhain, B. Urbaszek, C. O'Donnell, P. Tomasini, A. Balocchi, B. C. Cavenett

Research output: Contribution to journalArticlepeer-review

10 Citations (Scopus)


In this paper, a reproducible method for the growth of high quality ZnS, ZnCdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peaks and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have been produced. While the ZnS QWs show excellent full-width at half-maximum, strong broadening is observed in the latter system which is believed to arise from strain induced inhomogeneities in the alloy composition. © 2001 Elsevier Science B.V.

Original languageEnglish
Pages (from-to)655-659
Number of pages5
JournalJournal of Crystal Growth
Publication statusPublished - Jul 2001
Event11th International Conference on Molecular Beam Epitaxy - Bijing, China
Duration: 11 Sept 200015 Sept 2000


  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • A3. Quantum wells
  • B1. Cadmium compounds
  • B1. Sulfides
  • B1. Zinc compounds
  • B2. Semiconducting II-VI materials


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