Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP

K. A. Prior; S. A. Telfer; X. Tang; Christian Morhain; B. Urbaszek; C. O'Donnell; P. Tomasini; A. Balocchi; B. C. Cavenett

doi:10.1016/S0022-0248(01)00792-8

Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP

K. A. Prior, S. A. Telfer, X. Tang, Christian Morhain, B. Urbaszek, C. O'Donnell, P. Tomasini, A. Balocchi, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

Abstract

In this paper, a reproducible method for the growth of high quality ZnS, ZnCdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peaks and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have been produced. While the ZnS QWs show excellent full-width at half-maximum, strong broadening is observed in the latter system which is believed to arise from strain induced inhomogeneities in the alloy composition. © 2001 Elsevier Science B.V.

Original language	English
Pages (from-to)	655-659
Number of pages	5
Journal	Journal of Crystal Growth
Volume	227-228
DOIs	https://doi.org/10.1016/S0022-0248(01)00792-8
Publication status	Published - Jul 2001
Event	11th International Conference on Molecular Beam Epitaxy - Bijing, China Duration: 11 Sept 2000 → 15 Sept 2000

Keywords

A1. X-ray diffraction
A3. Molecular beam epitaxy
A3. Quantum wells
B1. Cadmium compounds
B1. Sulfides
B1. Zinc compounds
B2. Semiconducting II-VI materials

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10.1016/S0022-0248(01)00792-8

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title = "Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP",

abstract = "In this paper, a reproducible method for the growth of high quality ZnS, ZnCdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peaks and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have been produced. While the ZnS QWs show excellent full-width at half-maximum, strong broadening is observed in the latter system which is believed to arise from strain induced inhomogeneities in the alloy composition. {\textcopyright} 2001 Elsevier Science B.V.",

keywords = "A1. X-ray diffraction, A3. Molecular beam epitaxy, A3. Quantum wells, B1. Cadmium compounds, B1. Sulfides, B1. Zinc compounds, B2. Semiconducting II-VI materials",

author = "Prior, {K. A.} and Telfer, {S. A.} and X. Tang and Christian Morhain and B. Urbaszek and C. O'Donnell and P. Tomasini and A. Balocchi and Cavenett, {B. C.}",

year = "2001",

month = jul,

doi = "10.1016/S0022-0248(01)00792-8",

language = "English",

volume = "227-228",

pages = "655--659",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

note = "11th International Conference on Molecular Beam Epitaxy ; Conference date: 11-09-2000 Through 15-09-2000",

}

TY - JOUR

T1 - Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP

AU - Prior, K. A.

AU - Telfer, S. A.

AU - Tang, X.

AU - Morhain, Christian

AU - Urbaszek, B.

AU - O'Donnell, C.

AU - Tomasini, P.

AU - Balocchi, A.

AU - Cavenett, B. C.

PY - 2001/7

Y1 - 2001/7

N2 - In this paper, a reproducible method for the growth of high quality ZnS, ZnCdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peaks and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have been produced. While the ZnS QWs show excellent full-width at half-maximum, strong broadening is observed in the latter system which is believed to arise from strain induced inhomogeneities in the alloy composition. © 2001 Elsevier Science B.V.

AB - In this paper, a reproducible method for the growth of high quality ZnS, ZnCdS and ZnMgS epilayers on GaP(1 0 0) substrates is described resulting in lattice matched ZnMgS and ZnCdS epilayers showing both excellent DCXRD peaks and optical properties. ZnMgS/ZnS and ZnS/ZnCdS quantum wells (QWs) have been produced. While the ZnS QWs show excellent full-width at half-maximum, strong broadening is observed in the latter system which is believed to arise from strain induced inhomogeneities in the alloy composition. © 2001 Elsevier Science B.V.

KW - A1. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - A3. Quantum wells

KW - B1. Cadmium compounds

KW - B1. Sulfides

KW - B1. Zinc compounds

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=0035398208&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)00792-8

DO - 10.1016/S0022-0248(01)00792-8

M3 - Article

SN - 0022-0248

VL - 227-228

SP - 655

EP - 659

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - 11th International Conference on Molecular Beam Epitaxy

Y2 - 11 September 2000 through 15 September 2000

ER -

Growth of (Zn,Cd)S and (Zn,Mg)S containing structures on GaP

Abstract

Keywords

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