INIS
growth
100%
sulfur
100%
molecular beam epitaxy
100%
zinc sulfides
100%
manganese sulfides
100%
layers
33%
photoluminescence
33%
zinc selenides
33%
magnesium sulfides
33%
substrates
16%
crystal structure
16%
emission
16%
energy
16%
atoms
16%
confinement
16%
lattice parameters
16%
electrons
16%
gallium arsenides
16%
Engineering
Heterostructures
100%
Crystal Structure
50%
Energy Engineering
50%
Gallium Arsenide
50%
Electron Confinement
50%
Lattice Constant
50%
Heterojunctions
50%
Earth and Planetary Sciences
Molecular Beam Epitaxy
100%
Zinc Sulfide
100%
Photoluminescence
66%
Crystal Structure
33%
Heterojunctions
33%
Emissions
33%
Material Science
Heterojunction
100%
Molecular Beam Epitaxy
100%
Photoluminescence
66%
Lattice Constant
33%
Gallium Arsenide
33%
Crystal Structure
33%
Physics
Molecular Beam Epitaxy
100%
Zinc Sulfide
100%
Photoluminescence
66%
Heterojunctions
33%
Crystal Structure
33%
Chemical Engineering
Molecular Beam Epitaxy
100%