Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulfur source

L. David, C. Bradford, X. Tang, T. C M Graham, K. A. Prior, B. C. Cavenett

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35 Citations (Scopus)


Zinc blende (ZB) MnS has been grown by molecular beam epitaxy (MBE) on GaAs (1 0 0) substrates by a novel technique, developed previously for the growth of ZB MgS, which uses ZnS as a source of sulfur. Layers of up to 132 nm thick have been produced without any degradation of the crystal structure. Photoluminescence (PL) of single layers shows emission at 2.13 eV, indicating the presence of tetrahedrally co-ordinated Mn atoms. The lattice constant was found to be 0.5559 ± 0.0002 nm. Heterostructures of MnS/ZnSe and MgS/MnS have been fabricated and PL shows an electron confinement energy of 225 meV for a 4 nm MnS/ZnSe heterostructure. © 2002 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)591-595
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - Apr 2003
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: 15 Sept 200220 Sept 2002


  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Sulfides
  • B2. Semiconducting II-VI materials


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