Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulfur source

L. David, C. Bradford, X. Tang, T. C M Graham, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticlepeer-review

33 Citations (Scopus)

Abstract

Zinc blende (ZB) MnS has been grown by molecular beam epitaxy (MBE) on GaAs (1 0 0) substrates by a novel technique, developed previously for the growth of ZB MgS, which uses ZnS as a source of sulfur. Layers of up to 132 nm thick have been produced without any degradation of the crystal structure. Photoluminescence (PL) of single layers shows emission at 2.13 eV, indicating the presence of tetrahedrally co-ordinated Mn atoms. The lattice constant was found to be 0.5559 ± 0.0002 nm. Heterostructures of MnS/ZnSe and MgS/MnS have been fabricated and PL shows an electron confinement energy of 225 meV for a 4 nm MnS/ZnSe heterostructure. © 2002 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)591-595
Number of pages5
JournalJournal of Crystal Growth
Volume251
Issue number1-4
DOIs
Publication statusPublished - Apr 2003
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: 15 Sep 200220 Sep 2002

Keywords

  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • B1. Sulfides
  • B2. Semiconducting II-VI materials

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