Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulfur source

L. David; C. Bradford; X. Tang; T. C M Graham; K. A. Prior; B. C. Cavenett

doi:10.1016/S0022-0248(02)02205-4

Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulfur source

L. David, C. Bradford, X. Tang, T. C M Graham, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

37 Citations (Scopus)

Abstract

Zinc blende (ZB) MnS has been grown by molecular beam epitaxy (MBE) on GaAs (1 0 0) substrates by a novel technique, developed previously for the growth of ZB MgS, which uses ZnS as a source of sulfur. Layers of up to 132 nm thick have been produced without any degradation of the crystal structure. Photoluminescence (PL) of single layers shows emission at 2.13 eV, indicating the presence of tetrahedrally co-ordinated Mn atoms. The lattice constant was found to be 0.5559 ± 0.0002 nm. Heterostructures of MnS/ZnSe and MgS/MnS have been fabricated and PL shows an electron confinement energy of 225 meV for a 4 nm MnS/ZnSe heterostructure. © 2002 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	591-595
Number of pages	5
Journal	Journal of Crystal Growth
Volume	251
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(02)02205-4
Publication status	Published - Apr 2003
Event	Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States Duration: 15 Sept 2002 → 20 Sept 2002

Keywords

A1. X-ray diffraction
A3. Molecular beam epitaxy
B1. Sulfides
B2. Semiconducting II-VI materials

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10.1016/S0022-0248(02)02205-4

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title = "Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulfur source",

abstract = "Zinc blende (ZB) MnS has been grown by molecular beam epitaxy (MBE) on GaAs (1 0 0) substrates by a novel technique, developed previously for the growth of ZB MgS, which uses ZnS as a source of sulfur. Layers of up to 132 nm thick have been produced without any degradation of the crystal structure. Photoluminescence (PL) of single layers shows emission at 2.13 eV, indicating the presence of tetrahedrally co-ordinated Mn atoms. The lattice constant was found to be 0.5559 ± 0.0002 nm. Heterostructures of MnS/ZnSe and MgS/MnS have been fabricated and PL shows an electron confinement energy of 225 meV for a 4 nm MnS/ZnSe heterostructure. {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.",

keywords = "A1. X-ray diffraction, A3. Molecular beam epitaxy, B1. Sulfides, B2. Semiconducting II-VI materials",

author = "L. David and C. Bradford and X. Tang and Graham, {T. C M} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "2003",

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doi = "10.1016/S0022-0248(02)02205-4",

language = "English",

volume = "251",

pages = "591--595",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

note = "Proceedings of the Molecular Beam Epitaxy 2002 ; Conference date: 15-09-2002 Through 20-09-2002",

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TY - JOUR

T1 - Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulfur source

AU - David, L.

AU - Bradford, C.

AU - Tang, X.

AU - Graham, T. C M

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 2003/4

Y1 - 2003/4

N2 - Zinc blende (ZB) MnS has been grown by molecular beam epitaxy (MBE) on GaAs (1 0 0) substrates by a novel technique, developed previously for the growth of ZB MgS, which uses ZnS as a source of sulfur. Layers of up to 132 nm thick have been produced without any degradation of the crystal structure. Photoluminescence (PL) of single layers shows emission at 2.13 eV, indicating the presence of tetrahedrally co-ordinated Mn atoms. The lattice constant was found to be 0.5559 ± 0.0002 nm. Heterostructures of MnS/ZnSe and MgS/MnS have been fabricated and PL shows an electron confinement energy of 225 meV for a 4 nm MnS/ZnSe heterostructure. © 2002 Elsevier Science B.V. All rights reserved.

AB - Zinc blende (ZB) MnS has been grown by molecular beam epitaxy (MBE) on GaAs (1 0 0) substrates by a novel technique, developed previously for the growth of ZB MgS, which uses ZnS as a source of sulfur. Layers of up to 132 nm thick have been produced without any degradation of the crystal structure. Photoluminescence (PL) of single layers shows emission at 2.13 eV, indicating the presence of tetrahedrally co-ordinated Mn atoms. The lattice constant was found to be 0.5559 ± 0.0002 nm. Heterostructures of MnS/ZnSe and MgS/MnS have been fabricated and PL shows an electron confinement energy of 225 meV for a 4 nm MnS/ZnSe heterostructure. © 2002 Elsevier Science B.V. All rights reserved.

KW - A1. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - B1. Sulfides

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=0037382427&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(02)02205-4

DO - 10.1016/S0022-0248(02)02205-4

M3 - Article

SN - 0022-0248

VL - 251

SP - 591

EP - 595

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - Proceedings of the Molecular Beam Epitaxy 2002

Y2 - 15 September 2002 through 20 September 2002

ER -

Growth of zinc blende MnS and MnS heterostructures by MBE using ZnS as a sulfur source

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Keywords

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