Growth of zinc blende MgS/ZnSe single quantum wells by molecular-beam epitaxy using ZnS as a sulphur source

C. Bradford, C. B. O'Donnell, B. Urbaszek, A. Balocchi, Christian Morhain, K. A. Prior, B. C. Cavenett

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Abstract

Zinc blende MgS has been grown on GaAs by molecular beam epitaxy using a novel method where the sources were Mg and ZnS. A reaction at the surface results in the formation of MgS layers with a Zn content estimated by secondary ion mass spectrometry and Auger spectroscopy to be between 0.5% and 2%. Double crystal x-ray rocking curve measurements of ZnSe/MgS/ZnSe layers show layers with good crystallinity. Using this growth technique layers up to 67 nm thick have been grown. Photoluminescence measurements of MgS/ZnSe/MgS single-quantum-well structures show that the confinement of the heavy hole excitons can be as large as 430 meV for a 1.7 nm well. © 2000 American Institute of Physics.

Original languageEnglish
Pages (from-to)3929-3931
Number of pages3
JournalApplied Physics Letters
Volume76
Issue number26
Publication statusPublished - 26 Jun 2000

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    Bradford, C., O'Donnell, C. B., Urbaszek, B., Balocchi, A., Morhain, C., Prior, K. A., & Cavenett, B. C. (2000). Growth of zinc blende MgS/ZnSe single quantum wells by molecular-beam epitaxy using ZnS as a sulphur source. Applied Physics Letters, 76(26), 3929-3931.