Growth of zinc blende MgS and MgS/ZnSe quantum wells by MBE using ZnS as a sulphur source

C. Bradford; C. B. O'Donnell; B. Urbaszek; A. Balocchi; C. Morhain; K. A. Prior; B. C. Cavenett

doi:10.1016/S0022-0248(01)00787-4

Growth of zinc blende MgS and MgS/ZnSe quantum wells by MBE using ZnS as a sulphur source

C. Bradford, C. B. O'Donnell, B. Urbaszek, A. Balocchi, C. Morhain, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

We have grown MgS by MBE in the zinc blende crystal structure on GaAs(1 0 0) substrates using a novel technique where the sources are Mg and ZnS. Layers up to 134 nm thick have been grown without any degradation in the crystal structure. The lattice constant was found to be 0.5619 ± 0.0001 nm and Poisson's ratio was estimated to be 0.425. PL and reflection spectra obtained from ZnSe quantum wells showed sharp signals indicating less than 1 ML fluctuations on the well widths. A binding energy of 43.9 meV has been obtained from excitons confined in a 5 nm wide ZnSe well. © 2001 Elsevier Science B.V.

Original language	English
Pages (from-to)	634-638
Number of pages	5
Journal	Journal of Crystal Growth
Volume	227-228
DOIs	https://doi.org/10.1016/S0022-0248(01)00787-4
Publication status	Published - Jul 2001
Event	11th International Conference on Molecular Beam Epitaxy - Bijing, China Duration: 11 Sept 2000 → 15 Sept 2000

Keywords

A1. X-ray diffraction
A3. Molecular beam epitaxy
A3. Superlattices
B1. Sulfides
B2. Semiconducting II-VI materials

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10.1016/S0022-0248(01)00787-4

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title = "Growth of zinc blende MgS and MgS/ZnSe quantum wells by MBE using ZnS as a sulphur source",

abstract = "We have grown MgS by MBE in the zinc blende crystal structure on GaAs(1 0 0) substrates using a novel technique where the sources are Mg and ZnS. Layers up to 134 nm thick have been grown without any degradation in the crystal structure. The lattice constant was found to be 0.5619 ± 0.0001 nm and Poisson's ratio was estimated to be 0.425. PL and reflection spectra obtained from ZnSe quantum wells showed sharp signals indicating less than 1 ML fluctuations on the well widths. A binding energy of 43.9 meV has been obtained from excitons confined in a 5 nm wide ZnSe well. {\textcopyright} 2001 Elsevier Science B.V.",

keywords = "A1. X-ray diffraction, A3. Molecular beam epitaxy, A3. Superlattices, B1. Sulfides, B2. Semiconducting II-VI materials",

author = "C. Bradford and O'Donnell, {C. B.} and B. Urbaszek and A. Balocchi and C. Morhain and Prior, {K. A.} and Cavenett, {B. C.}",

year = "2001",

month = jul,

doi = "10.1016/S0022-0248(01)00787-4",

language = "English",

volume = "227-228",

pages = "634--638",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier B.V.",

note = "11th International Conference on Molecular Beam Epitaxy ; Conference date: 11-09-2000 Through 15-09-2000",

}

TY - JOUR

T1 - Growth of zinc blende MgS and MgS/ZnSe quantum wells by MBE using ZnS as a sulphur source

AU - Bradford, C.

AU - O'Donnell, C. B.

AU - Urbaszek, B.

AU - Balocchi, A.

AU - Morhain, C.

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 2001/7

Y1 - 2001/7

N2 - We have grown MgS by MBE in the zinc blende crystal structure on GaAs(1 0 0) substrates using a novel technique where the sources are Mg and ZnS. Layers up to 134 nm thick have been grown without any degradation in the crystal structure. The lattice constant was found to be 0.5619 ± 0.0001 nm and Poisson's ratio was estimated to be 0.425. PL and reflection spectra obtained from ZnSe quantum wells showed sharp signals indicating less than 1 ML fluctuations on the well widths. A binding energy of 43.9 meV has been obtained from excitons confined in a 5 nm wide ZnSe well. © 2001 Elsevier Science B.V.

AB - We have grown MgS by MBE in the zinc blende crystal structure on GaAs(1 0 0) substrates using a novel technique where the sources are Mg and ZnS. Layers up to 134 nm thick have been grown without any degradation in the crystal structure. The lattice constant was found to be 0.5619 ± 0.0001 nm and Poisson's ratio was estimated to be 0.425. PL and reflection spectra obtained from ZnSe quantum wells showed sharp signals indicating less than 1 ML fluctuations on the well widths. A binding energy of 43.9 meV has been obtained from excitons confined in a 5 nm wide ZnSe well. © 2001 Elsevier Science B.V.

KW - A1. X-ray diffraction

KW - A3. Molecular beam epitaxy

KW - A3. Superlattices

KW - B1. Sulfides

KW - B2. Semiconducting II-VI materials

UR - http://www.scopus.com/inward/record.url?scp=0035398126&partnerID=8YFLogxK

U2 - 10.1016/S0022-0248(01)00787-4

DO - 10.1016/S0022-0248(01)00787-4

M3 - Article

SN - 0022-0248

VL - 227-228

SP - 634

EP - 638

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

T2 - 11th International Conference on Molecular Beam Epitaxy

Y2 - 11 September 2000 through 15 September 2000

ER -

Growth of zinc blende MgS and MgS/ZnSe quantum wells by MBE using ZnS as a sulphur source

Abstract

Keywords

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