Abstract
We have grown MgS by MBE in the zinc blende crystal structure on GaAs(1 0 0) substrates using a novel technique where the sources are Mg and ZnS. Layers up to 134 nm thick have been grown without any degradation in the crystal structure. The lattice constant was found to be 0.5619 ± 0.0001 nm and Poisson's ratio was estimated to be 0.425. PL and reflection spectra obtained from ZnSe quantum wells showed sharp signals indicating less than 1 ML fluctuations on the well widths. A binding energy of 43.9 meV has been obtained from excitons confined in a 5 nm wide ZnSe well. © 2001 Elsevier Science B.V.
Original language | English |
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Pages (from-to) | 634-638 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 227-228 |
DOIs | |
Publication status | Published - Jul 2001 |
Event | 11th International Conference on Molecular Beam Epitaxy - Bijing, China Duration: 11 Sept 2000 → 15 Sept 2000 |
Keywords
- A1. X-ray diffraction
- A3. Molecular beam epitaxy
- A3. Superlattices
- B1. Sulfides
- B2. Semiconducting II-VI materials