Growth of zinc blende MgS and MgS/ZnSe quantum wells by MBE using ZnS as a sulphur source

C. Bradford, C. B. O'Donnell, B. Urbaszek, A. Balocchi, C. Morhain, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticle

Abstract

We have grown MgS by MBE in the zinc blende crystal structure on GaAs(1 0 0) substrates using a novel technique where the sources are Mg and ZnS. Layers up to 134 nm thick have been grown without any degradation in the crystal structure. The lattice constant was found to be 0.5619 ± 0.0001 nm and Poisson's ratio was estimated to be 0.425. PL and reflection spectra obtained from ZnSe quantum wells showed sharp signals indicating less than 1 ML fluctuations on the well widths. A binding energy of 43.9 meV has been obtained from excitons confined in a 5 nm wide ZnSe well. © 2001 Elsevier Science B.V.

Original languageEnglish
Pages (from-to)634-638
Number of pages5
JournalJournal of Crystal Growth
Volume227-228
DOIs
Publication statusPublished - Jul 2001
Event11th International Conference on Molecular Beam Epitaxy - Bijing, China
Duration: 11 Sep 200015 Sep 2000

Keywords

  • A1. X-ray diffraction
  • A3. Molecular beam epitaxy
  • A3. Superlattices
  • B1. Sulfides
  • B2. Semiconducting II-VI materials

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    Bradford, C., O'Donnell, C. B., Urbaszek, B., Balocchi, A., Morhain, C., Prior, K. A., & Cavenett, B. C. (2001). Growth of zinc blende MgS and MgS/ZnSe quantum wells by MBE using ZnS as a sulphur source. Journal of Crystal Growth, 227-228, 634-638. https://doi.org/10.1016/S0022-0248(01)00787-4