Growth of sulphur-based ternary and quaternary epilayers for use in multilayer devices

G. D. Brownlie, B. Vögele, W. Meredith, J S Milnes, K. A. Prior, B. C. Cavenett

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Abstract

We report the use of a valved cracker cell for sulphur in the growth of doped and undoped ZnSSe and ZnMgSSe lattice matched to GaAs for use in multilayer device structures. The cell provides fast flux changes allowing adjacent layers with differing S contents to be produced with a single S source without interruptions in the growth. Material grown using elemental sulphur shows good morphology with both high-quality photoluminescence spectra and X-ray double-crystal rocking curves. © 1998 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)37-40
Number of pages4
JournalJournal of Crystal Growth
Volume184/185
Publication statusPublished - 1998

Keywords

  • Doping
  • Molecular beam epitaxy
  • S-valved cracker cell
  • ZnMgSSe
  • ZnSSe

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    Brownlie, G. D., Vögele, B., Meredith, W., Milnes, J. S., Prior, K. A., & Cavenett, B. C. (1998). Growth of sulphur-based ternary and quaternary epilayers for use in multilayer devices. Journal of Crystal Growth, 184/185, 37-40.