Growth of sulphur-based ternary and quaternary epilayers for use in multilayer devices

G. D. Brownlie; B. Vögele; W. Meredith; J S Milnes; K. A. Prior; B. C. Cavenett

Growth of sulphur-based ternary and quaternary epilayers for use in multilayer devices

G. D. Brownlie, B. Vögele, W. Meredith, J S Milnes, K. A. Prior, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

7 Citations (Scopus)

Abstract

We report the use of a valved cracker cell for sulphur in the growth of doped and undoped ZnSSe and ZnMgSSe lattice matched to GaAs for use in multilayer device structures. The cell provides fast flux changes allowing adjacent layers with differing S contents to be produced with a single S source without interruptions in the growth. Material grown using elemental sulphur shows good morphology with both high-quality photoluminescence spectra and X-ray double-crystal rocking curves. © 1998 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	37-40
Number of pages	4
Journal	Journal of Crystal Growth
Volume	184/185
Publication status	Published - 1998

Keywords

Doping
Molecular beam epitaxy
S-valved cracker cell
ZnMgSSe
ZnSSe

Cite this

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title = "Growth of sulphur-based ternary and quaternary epilayers for use in multilayer devices",

abstract = "We report the use of a valved cracker cell for sulphur in the growth of doped and undoped ZnSSe and ZnMgSSe lattice matched to GaAs for use in multilayer device structures. The cell provides fast flux changes allowing adjacent layers with differing S contents to be produced with a single S source without interruptions in the growth. Material grown using elemental sulphur shows good morphology with both high-quality photoluminescence spectra and X-ray double-crystal rocking curves. {\textcopyright} 1998 Elsevier Science B.V. All rights reserved.",

keywords = "Doping, Molecular beam epitaxy, S-valved cracker cell, ZnMgSSe, ZnSSe",

author = "Brownlie, {G. D.} and B. V{\"o}gele and W. Meredith and Milnes, {J S} and Prior, {K. A.} and Cavenett, {B. C.}",

year = "1998",

language = "English",

volume = "184/185",

pages = "37--40",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

}

TY - JOUR

T1 - Growth of sulphur-based ternary and quaternary epilayers for use in multilayer devices

AU - Brownlie, G. D.

AU - Vögele, B.

AU - Meredith, W.

AU - Milnes, J S

AU - Prior, K. A.

AU - Cavenett, B. C.

PY - 1998

Y1 - 1998

N2 - We report the use of a valved cracker cell for sulphur in the growth of doped and undoped ZnSSe and ZnMgSSe lattice matched to GaAs for use in multilayer device structures. The cell provides fast flux changes allowing adjacent layers with differing S contents to be produced with a single S source without interruptions in the growth. Material grown using elemental sulphur shows good morphology with both high-quality photoluminescence spectra and X-ray double-crystal rocking curves. © 1998 Elsevier Science B.V. All rights reserved.

AB - We report the use of a valved cracker cell for sulphur in the growth of doped and undoped ZnSSe and ZnMgSSe lattice matched to GaAs for use in multilayer device structures. The cell provides fast flux changes allowing adjacent layers with differing S contents to be produced with a single S source without interruptions in the growth. Material grown using elemental sulphur shows good morphology with both high-quality photoluminescence spectra and X-ray double-crystal rocking curves. © 1998 Elsevier Science B.V. All rights reserved.

KW - Doping

KW - Molecular beam epitaxy

KW - S-valved cracker cell

KW - ZnMgSSe

KW - ZnSSe

M3 - Article

SN - 0022-0248

VL - 184/185

SP - 37

EP - 40

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

ER -

Growth of sulphur-based ternary and quaternary epilayers for use in multilayer devices

Abstract

Keywords

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