GROWTH OF OXIDE LAYERS ON Si USING LASER RADIATION.

I. W. Boyd, J. I B Wilson

Research output: Contribution to conferencePaper

Abstract

The authors describe the cw CO//2 and argon ion laser oxidation of Si with a summary of the structural and electrical behavior of the CO//2 laser oxides, and a proposed mechanism for the enhanced growth rate of the Ar laser oxides.

Original languageEnglish
Publication statusPublished - 1983

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