GROWTH OF OXIDE LAYERS ON Si USING LASER RADIATION.

I. W. Boyd; J. I B Wilson

GROWTH OF OXIDE LAYERS ON Si USING LASER RADIATION.

I. W. Boyd, J. I B Wilson

School of Engineering & Physical Sciences

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Abstract

The authors describe the cw CO//2 and argon ion laser oxidation of Si with a summary of the structural and electrical behavior of the CO//2 laser oxides, and a proposed mechanism for the enhanced growth rate of the Ar laser oxides.

Original language	English
Publication status	Published - 1983

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@conference{c76215cf5919451985c68bb619338d60,

title = "GROWTH OF OXIDE LAYERS ON Si USING LASER RADIATION.",

abstract = "The authors describe the cw CO//2 and argon ion laser oxidation of Si with a summary of the structural and electrical behavior of the CO//2 laser oxides, and a proposed mechanism for the enhanced growth rate of the Ar laser oxides.",

author = "Boyd, {I. W.} and Wilson, {J. I B}",

year = "1983",

language = "English",

}

TY - CONF

T1 - GROWTH OF OXIDE LAYERS ON Si USING LASER RADIATION.

AU - Boyd, I. W.

AU - Wilson, J. I B

PY - 1983

Y1 - 1983

N2 - The authors describe the cw CO//2 and argon ion laser oxidation of Si with a summary of the structural and electrical behavior of the CO//2 laser oxides, and a proposed mechanism for the enhanced growth rate of the Ar laser oxides.

AB - The authors describe the cw CO//2 and argon ion laser oxidation of Si with a summary of the structural and electrical behavior of the CO//2 laser oxides, and a proposed mechanism for the enhanced growth rate of the Ar laser oxides.

UR - http://www.scopus.com/inward/record.url?scp=0020899604&partnerID=8YFLogxK

M3 - Paper

ER -

GROWTH OF OXIDE LAYERS ON Si USING LASER RADIATION.

Abstract

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