Growth of metastable ZB CrSe

Richard T. Moug*, Kevin A. Prior

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contribution

2 Citations (Scopus)

Abstract

In this paper we present, for the first time, evidence of the metastable compound CrSe grown by MBE in the ZB crystal structure. Using a compound 6N CdSe source and 6N purity Cr we demonstrate the material can be grown with a growth rate of 0.06 angstrom s(-1) in layers up to approximately 20 nm thick. Secondary ion mass spectrometry (SIMS), X-ray reflection (XRR), RHEED and optical microscopy were used to examine the composition and morphology. (C) 2014 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim

Original languageEnglish
Title of host publication16th International Conference on II-VI Compounds and Related Materials
EditorsS Hildebrandt
Place of PublicationWeinheim
PublisherWiley
Pages1206-1209
Number of pages4
DOIs
Publication statusPublished - 2014
Event16th International Conference on II-VI Compounds and Related Materials - Nagahama, Japan
Duration: 9 Sept 201313 Sept 2013

Publication series

NamePhysica Status Solidi C-Current Topics in Solid State Physics
PublisherWiley
Volume11
ISSN (Print)1862-6351

Conference

Conference16th International Conference on II-VI Compounds and Related Materials
Country/TerritoryJapan
Period9/09/1313/09/13

Keywords

  • metal
  • metastable
  • GaAs
  • zinc blende
  • CrSe
  • MOLECULAR-BEAM EPITAXY
  • SULFUR SOURCE
  • HETEROSTRUCTURES
  • LAYERS
  • ZNS

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