In this paper we report the first successful use of an electrochemical sulphur source to grown ZnSxSe1-x by the technique of molecular beam epitaxy. Photoluminescence measurements show that layers with 0=x=0.2 have been grown and that the material quality is comparable to that grown by other techniques. © 1989.
|Number of pages||4|
|Journal||Journal of Crystal Growth|
|Publication status||Published - 1 Apr 1990|