Growth of MBE ZnSxSe1-x using a novel electrochemical sulphur source

K. A. Prior; J. M. Wallace; J. J. Hunter; S. J A Adams; M. J L S Haines; M. Saoudi; B. C. Cavenett

Growth of MBE ZnS_xSe_1-x using a novel electrochemical sulphur source

K. A. Prior, J. M. Wallace, J. J. Hunter, S. J A Adams, M. J L S Haines, M. Saoudi, B. C. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

14 Citations (Scopus)

Abstract

In this paper we report the first successful use of an electrochemical sulphur source to grown ZnS_xSe_1-x by the technique of molecular beam epitaxy. Photoluminescence measurements show that layers with 0=x=0.2 have been grown and that the material quality is comparable to that grown by other techniques. © 1989.

Original language	English
Pages (from-to)	176-179
Number of pages	4
Journal	Journal of Crystal Growth
Volume	101
Issue number	1-4
Publication status	Published - 1 Apr 1990

Cite this

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title = "Growth of MBE ZnSxSe1-x using a novel electrochemical sulphur source",

abstract = "In this paper we report the first successful use of an electrochemical sulphur source to grown ZnSxSe1-x by the technique of molecular beam epitaxy. Photoluminescence measurements show that layers with 0=x=0.2 have been grown and that the material quality is comparable to that grown by other techniques. {\textcopyright} 1989.",

author = "Prior, {K. A.} and Wallace, {J. M.} and Hunter, {J. J.} and Adams, {S. J A} and Haines, {M. J L S} and M. Saoudi and Cavenett, {B. C.}",

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T1 - Growth of MBE ZnSxSe1-x using a novel electrochemical sulphur source

AU - Prior, K. A.

AU - Wallace, J. M.

AU - Hunter, J. J.

AU - Adams, S. J A

AU - Haines, M. J L S

AU - Saoudi, M.

AU - Cavenett, B. C.

PY - 1990/4/1

Y1 - 1990/4/1

N2 - In this paper we report the first successful use of an electrochemical sulphur source to grown ZnSxSe1-x by the technique of molecular beam epitaxy. Photoluminescence measurements show that layers with 0=x=0.2 have been grown and that the material quality is comparable to that grown by other techniques. © 1989.

AB - In this paper we report the first successful use of an electrochemical sulphur source to grown ZnSxSe1-x by the technique of molecular beam epitaxy. Photoluminescence measurements show that layers with 0=x=0.2 have been grown and that the material quality is comparable to that grown by other techniques. © 1989.

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M3 - Article

SN - 0022-0248

VL - 101

SP - 176

EP - 179

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

ER -

Growth of MBE ZnS_xSe_1-x using a novel electrochemical sulphur source

Abstract

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