Growth of MBE ZnSxSe1-x using a novel electrochemical sulphur source

K. A. Prior, J. M. Wallace, J. J. Hunter, S. J A Adams, M. J L S Haines, M. Saoudi, B. C. Cavenett

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Abstract

In this paper we report the first successful use of an electrochemical sulphur source to grown ZnSxSe1-x by the technique of molecular beam epitaxy. Photoluminescence measurements show that layers with 0=x=0.2 have been grown and that the material quality is comparable to that grown by other techniques. © 1989.

Original languageEnglish
Pages (from-to)176-179
Number of pages4
JournalJournal of Crystal Growth
Volume101
Issue number1-4
Publication statusPublished - 1 Apr 1990

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    Prior, K. A., Wallace, J. M., Hunter, J. J., Adams, S. J. A., Haines, M. J. L. S., Saoudi, M., & Cavenett, B. C. (1990). Growth of MBE ZnSxSe1-x using a novel electrochemical sulphur source. Journal of Crystal Growth, 101(1-4), 176-179.