Growth of fully doped Hgl-XcdXtel heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures

C D Maxey; CL Jones; NE Metcalfe; R Catchpole; MR Houlton; A M White; N T Gordon; C Tom Elliott

Growth of fully doped Hgl-XcdXtel heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures

C D Maxey, CL Jones, NE Metcalfe, R Catchpole, MR Houlton, A M White, N T Gordon, C Tom Elliott

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article

Original language	English
Pages (from-to)	1276-1285
Number of pages	10
Journal	Journal of Electronic Materials
Volume	25
Publication status	Published - 1996

Cite this

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title = "Growth of fully doped Hgl-XcdXtel heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures",

author = "Maxey, {C D} and CL Jones and NE Metcalfe and R Catchpole and MR Houlton and White, {A M} and Gordon, {N T} and Elliott, {C Tom}",

year = "1996",

language = "English",

volume = "25",

pages = "1276--1285",

journal = "Journal of Electronic Materials",

issn = "0361-5235",

publisher = "Springer",

}

TY - JOUR

T1 - Growth of fully doped Hgl-XcdXtel heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures

AU - Maxey, C D

AU - Jones, CL

AU - Metcalfe, NE

AU - Catchpole, R

AU - Houlton, MR

AU - White, A M

AU - Gordon, N T

AU - Elliott, C Tom

PY - 1996

Y1 - 1996

M3 - Article

SN - 0361-5235

VL - 25

SP - 1276

EP - 1285

JO - Journal of Electronic Materials

JF - Journal of Electronic Materials

ER -