Growth of fully doped Hgl-XcdXtel heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures

C D Maxey, CL Jones, NE Metcalfe, R Catchpole, MR Houlton, A M White, N T Gordon, C Tom Elliott

Research output: Contribution to journalArticle

22 Citations (Scopus)
Original languageEnglish
Pages (from-to)1276-1285
Number of pages10
JournalJournal of Electronic Materials
Volume25
Publication statusPublished - 1996

Cite this

Maxey, C. D., Jones, CL., Metcalfe, NE., Catchpole, R., Houlton, MR., White, A. M., Gordon, N. T., & Elliott, C. T. (1996). Growth of fully doped Hgl-XcdXtel heterostructures using a novel iodine doping source to achieve improved device performance at elevated temperatures. Journal of Electronic Materials, 25, 1276-1285.