Growth and stability of zinc blende MgS on GaAs, GaP, and InP substrates

Akhil Rajan; Richard Moug; Kevin Alan Prior

doi:10.1063/1.4788741

Growth and stability of zinc blende MgS on GaAs, GaP, and InP substrates

Akhil Rajan, Richard Moug, Kevin Alan Prior

Research output: Contribution to journal › Article › peer-review

10 Citations (Scopus)

134 Downloads (Pure)

Abstract

The molecular beam epitaxial growth of zinc blende (ZB) MgS on GaAs, GaP, and InP substrates has been investigated by X-ray diffraction and RHEED, with MgS layer strain varying between 3.1% compressive strain (GaP) and 4.4% tensile strain (InP). ZB MgS could be grown on all three substrates. X-ray diffraction showed substantial MgS relaxation during growth before conversion to the rock salt phase. Results are compared with predictions that stable growth on GaP is unlikely and relaxed ZB MgS does not grow in layers over a few Å thick. Our results imply growth of ZB MgS is truly metastable.

Original language	English
Article number	032102
Journal	Applied Physics Letters
Volume	102
Issue number	3
DOIs	https://doi.org/10.1063/1.4788741
Publication status	Published - 21 Jan 2013

Access to Document

10.1063/1.4788741

Download as PDFFinal published version, 554 KB

Cite this

@article{f7a1e056d89b42168d94151d1d78bb25,

title = "Growth and stability of zinc blende MgS on GaAs, GaP, and InP substrates",

abstract = "The molecular beam epitaxial growth of zinc blende (ZB) MgS on GaAs, GaP, and InP substrates has been investigated by X-ray diffraction and RHEED, with MgS layer strain varying between 3.1% compressive strain (GaP) and 4.4% tensile strain (InP). ZB MgS could be grown on all three substrates. X-ray diffraction showed substantial MgS relaxation during growth before conversion to the rock salt phase. Results are compared with predictions that stable growth on GaP is unlikely and relaxed ZB MgS does not grow in layers over a few {\AA} thick. Our results imply growth of ZB MgS is truly metastable.",

author = "Akhil Rajan and Richard Moug and Prior, {Kevin Alan}",

year = "2013",

month = jan,

day = "21",

doi = "10.1063/1.4788741",

language = "English",

volume = "102",

journal = "Applied Physics Letters",

issn = "0003-6951",

publisher = "American Institute of Physics Publising LLC",

number = "3",

}

TY - JOUR

T1 - Growth and stability of zinc blende MgS on GaAs, GaP, and InP substrates

AU - Rajan, Akhil

AU - Moug, Richard

AU - Prior, Kevin Alan

PY - 2013/1/21

Y1 - 2013/1/21

N2 - The molecular beam epitaxial growth of zinc blende (ZB) MgS on GaAs, GaP, and InP substrates has been investigated by X-ray diffraction and RHEED, with MgS layer strain varying between 3.1% compressive strain (GaP) and 4.4% tensile strain (InP). ZB MgS could be grown on all three substrates. X-ray diffraction showed substantial MgS relaxation during growth before conversion to the rock salt phase. Results are compared with predictions that stable growth on GaP is unlikely and relaxed ZB MgS does not grow in layers over a few Å thick. Our results imply growth of ZB MgS is truly metastable.

AB - The molecular beam epitaxial growth of zinc blende (ZB) MgS on GaAs, GaP, and InP substrates has been investigated by X-ray diffraction and RHEED, with MgS layer strain varying between 3.1% compressive strain (GaP) and 4.4% tensile strain (InP). ZB MgS could be grown on all three substrates. X-ray diffraction showed substantial MgS relaxation during growth before conversion to the rock salt phase. Results are compared with predictions that stable growth on GaP is unlikely and relaxed ZB MgS does not grow in layers over a few Å thick. Our results imply growth of ZB MgS is truly metastable.

U2 - 10.1063/1.4788741

DO - 10.1063/1.4788741

M3 - Article

AN - SCOPUS:84872967750

SN - 0003-6951

VL - 102

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 3

M1 - 032102

ER -

Growth and stability of zinc blende MgS on GaAs, GaP, and InP substrates

Abstract

Access to Document

Fingerprint

Cite this