Growth and characterization of ZnMgS and ZnMgS/ZnSe quantum wells grown on GaAs (100) by using MBE

C. Bradford, R. T. Moug, A. Curran, D. Thuau, R. J. Warburton, K. A. Prior

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4 Citations (Scopus)

Abstract

Structures containing Zn1-xMgxS have been grown lattice matched to GaAs by using molecular beam epitaxy (MBE) with ZnS as the source of S. The composition of the alloy produced has been determined using double-crystal X-ray spectroscopy and X-ray interference measurements. Both techniques indicate that 0.88 = × = 0.93. This result is confirmed by both secondary ion mass spectroscopy and an Auger analysis carried out on the material. These results show that the crystalline quality of the material produced is excellent and that it has been grown coherently to the GaAs substrate. Photoluminescence spectroscopy shows a high intensity emission with a narrow full width half maximum, confirming the suitability of this alloy as a high-bandgap barrier material.

Original languageEnglish
Pages (from-to)3000-3003
Number of pages4
JournalJournal of the Korean Physical Society
Volume53
Issue number5 PART 2
Publication statusPublished - Nov 2008

Keywords

  • Alloy stability
  • DCXRD
  • MgS
  • PL
  • Quantum wells
  • ZnMgS

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    Bradford, C., Moug, R. T., Curran, A., Thuau, D., Warburton, R. J., & Prior, K. A. (2008). Growth and characterization of ZnMgS and ZnMgS/ZnSe quantum wells grown on GaAs (100) by using MBE. Journal of the Korean Physical Society, 53(5 PART 2), 3000-3003.