Growth and characterization of MgS/CdSe self-assembled quantum dots

C. Bradford, B. Urbaszek, M. Funato, A. Balocchi, T. C M Graham, E. J. McGhee, R. J. Warburton, K. A. Prior, B. Cavenett

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Abstract

CdSe/MgS quantum dots have been grown successfully by molecular beam epitaxy using a thermally activated reorganization process that occurs during growth interruption. PL measurements show emission from both QDs and the wetting layer, with emission energies ranging between (2.3 and 3.8 eV). AFM topography and µ-PL measurements also show evidence of quantum dot structures. Power dependent PL measurements carried out on the dots give a value of 30 meV for the bi-exciton binding energy at 77 K. This value is larger than both the CdSe bulk LO phonon energy and the thermal energy at 300 K All rights reserved © 2002 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)581-585
Number of pages5
JournalJournal of Crystal Growth
Volume251
Issue number1-4
DOIs
Publication statusPublished - Apr 2003
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: 15 Sep 200220 Sep 2002

Keywords

  • A1. Atomic force microscopy
  • A1. Nanostructures: A3. Molecular beam epitaxy
  • B2. Semiconducting II-VI materials

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    Bradford, C., Urbaszek, B., Funato, M., Balocchi, A., Graham, T. C. M., McGhee, E. J., Warburton, R. J., Prior, K. A., & Cavenett, B. (2003). Growth and characterization of MgS/CdSe self-assembled quantum dots. Journal of Crystal Growth, 251(1-4), 581-585. https://doi.org/10.1016/S0022-0248(02)02309-6