Growth and characterization of MgS/CdSe self-assembled quantum dots

C. Bradford; B. Urbaszek; M. Funato; A. Balocchi; T. C M Graham; E. J. McGhee; R. J. Warburton; K. A. Prior; B. Cavenett

doi:10.1016/S0022-0248(02)02309-6

Growth and characterization of MgS/CdSe self-assembled quantum dots

C. Bradford, B. Urbaszek, M. Funato, A. Balocchi, T. C M Graham, E. J. McGhee, R. J. Warburton, K. A. Prior, B. Cavenett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

CdSe/MgS quantum dots have been grown successfully by molecular beam epitaxy using a thermally activated reorganization process that occurs during growth interruption. PL measurements show emission from both QDs and the wetting layer, with emission energies ranging between (2.3 and 3.8 eV). AFM topography and µ-PL measurements also show evidence of quantum dot structures. Power dependent PL measurements carried out on the dots give a value of 30 meV for the bi-exciton binding energy at 77 K. This value is larger than both the CdSe bulk LO phonon energy and the thermal energy at 300 K All rights reserved © 2002 Elsevier Science B.V. All rights reserved.

Original language	English
Pages (from-to)	581-585
Number of pages	5
Journal	Journal of Crystal Growth
Volume	251
Issue number	1-4
DOIs	https://doi.org/10.1016/S0022-0248(02)02309-6
Publication status	Published - Apr 2003
Event	Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States Duration: 15 Sept 2002 → 20 Sept 2002

Keywords

A1. Atomic force microscopy
A1. Nanostructures: A3. Molecular beam epitaxy
B2. Semiconducting II-VI materials

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10.1016/S0022-0248(02)02309-6

Cite this

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title = "Growth and characterization of MgS/CdSe self-assembled quantum dots",

abstract = "CdSe/MgS quantum dots have been grown successfully by molecular beam epitaxy using a thermally activated reorganization process that occurs during growth interruption. PL measurements show emission from both QDs and the wetting layer, with emission energies ranging between (2.3 and 3.8 eV). AFM topography and µ-PL measurements also show evidence of quantum dot structures. Power dependent PL measurements carried out on the dots give a value of 30 meV for the bi-exciton binding energy at 77 K. This value is larger than both the CdSe bulk LO phonon energy and the thermal energy at 300 K All rights reserved {\textcopyright} 2002 Elsevier Science B.V. All rights reserved.",

keywords = "A1. Atomic force microscopy, A1. Nanostructures: A3. Molecular beam epitaxy, B2. Semiconducting II-VI materials",

author = "C. Bradford and B. Urbaszek and M. Funato and A. Balocchi and Graham, {T. C M} and McGhee, {E. J.} and Warburton, {R. J.} and Prior, {K. A.} and B. Cavenett",

year = "2003",

month = apr,

doi = "10.1016/S0022-0248(02)02309-6",

language = "English",

volume = "251",

pages = "581--585",

journal = "Journal of Crystal Growth",

issn = "0022-0248",

publisher = "Elsevier",

number = "1-4",

note = "Proceedings of the Molecular Beam Epitaxy 2002 ; Conference date: 15-09-2002 Through 20-09-2002",

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TY - JOUR

T1 - Growth and characterization of MgS/CdSe self-assembled quantum dots

AU - Bradford, C.

AU - Urbaszek, B.

AU - Funato, M.

AU - Balocchi, A.

AU - Graham, T. C M

AU - McGhee, E. J.

AU - Warburton, R. J.

AU - Prior, K. A.

AU - Cavenett, B.

PY - 2003/4

Y1 - 2003/4

N2 - CdSe/MgS quantum dots have been grown successfully by molecular beam epitaxy using a thermally activated reorganization process that occurs during growth interruption. PL measurements show emission from both QDs and the wetting layer, with emission energies ranging between (2.3 and 3.8 eV). AFM topography and µ-PL measurements also show evidence of quantum dot structures. Power dependent PL measurements carried out on the dots give a value of 30 meV for the bi-exciton binding energy at 77 K. This value is larger than both the CdSe bulk LO phonon energy and the thermal energy at 300 K All rights reserved © 2002 Elsevier Science B.V. All rights reserved.

AB - CdSe/MgS quantum dots have been grown successfully by molecular beam epitaxy using a thermally activated reorganization process that occurs during growth interruption. PL measurements show emission from both QDs and the wetting layer, with emission energies ranging between (2.3 and 3.8 eV). AFM topography and µ-PL measurements also show evidence of quantum dot structures. Power dependent PL measurements carried out on the dots give a value of 30 meV for the bi-exciton binding energy at 77 K. This value is larger than both the CdSe bulk LO phonon energy and the thermal energy at 300 K All rights reserved © 2002 Elsevier Science B.V. All rights reserved.

KW - A1. Atomic force microscopy

KW - A1. Nanostructures: A3. Molecular beam epitaxy

KW - B2. Semiconducting II-VI materials

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U2 - 10.1016/S0022-0248(02)02309-6

DO - 10.1016/S0022-0248(02)02309-6

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VL - 251

SP - 581

EP - 585

JO - Journal of Crystal Growth

JF - Journal of Crystal Growth

IS - 1-4

T2 - Proceedings of the Molecular Beam Epitaxy 2002

Y2 - 15 September 2002 through 20 September 2002

ER -

Growth and characterization of MgS/CdSe self-assembled quantum dots

Abstract

Keywords

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