Growth and characterization of MgS/CdSe self-assembled quantum dots

C. Bradford, B. Urbaszek, M. Funato, A. Balocchi, T. C M Graham, E. J. McGhee, R. J. Warburton, K. A. Prior, B. Cavenett

Research output: Contribution to journalArticlepeer-review

20 Citations (Scopus)


CdSe/MgS quantum dots have been grown successfully by molecular beam epitaxy using a thermally activated reorganization process that occurs during growth interruption. PL measurements show emission from both QDs and the wetting layer, with emission energies ranging between (2.3 and 3.8 eV). AFM topography and µ-PL measurements also show evidence of quantum dot structures. Power dependent PL measurements carried out on the dots give a value of 30 meV for the bi-exciton binding energy at 77 K. This value is larger than both the CdSe bulk LO phonon energy and the thermal energy at 300 K All rights reserved © 2002 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)581-585
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - Apr 2003
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: 15 Sept 200220 Sept 2002


  • A1. Atomic force microscopy
  • A1. Nanostructures: A3. Molecular beam epitaxy
  • B2. Semiconducting II-VI materials


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