Growth and characterization of CdSe: Mn quantum dots

X. Tang, B. Urbaszek, T. C M Graham, R. J. Warburton, K. A. Prior, B. C. Cavenett

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


In this paper we report the growth by atomic layer epitaxy (ALE) and optical properties of ZnSe/CdSe:Mn magnetic quantum dots. For samples grown without a ZnSe capping layer, dot densities of the order of 109cm-2 were measured by atomic force microscopy (AFM). In capped samples, the ensemble dot photoluminescence (PL) was observed over a range of energies between 2.1 and 2.5 eV and a spectrally broad emission at 2.15 eV from the internal Mn2+ transition was observed at high Mn concentrations. Single dot spectroscopy was carried out by confocal microscopy and the PL linewidth was measured as a function of Mn concentration. At high Mn concentrations the temporal change in magnetization causes a broadening of the FWHM of lines from single dots of up to 4 meV. However, for low concentrations single dot PL linewidths were resolution limited at <0.2 meV. © 2002 Elsevier Science B.V. All rights reserved.

Original languageEnglish
Pages (from-to)586-590
Number of pages5
JournalJournal of Crystal Growth
Issue number1-4
Publication statusPublished - Apr 2003
EventProceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States
Duration: 15 Sept 200220 Sept 2002


  • A1. Atomic force microscopy
  • A1. Nanostructures
  • A3. Atomic layer epitaxy
  • A3. Molecular beam epitaxy
  • B2. Semiconducting II-VI materials


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