Abstract
In this paper we report the growth by atomic layer epitaxy (ALE) and optical properties of ZnSe/CdSe:Mn magnetic quantum dots. For samples grown without a ZnSe capping layer, dot densities of the order of 109cm-2 were measured by atomic force microscopy (AFM). In capped samples, the ensemble dot photoluminescence (PL) was observed over a range of energies between 2.1 and 2.5 eV and a spectrally broad emission at 2.15 eV from the internal Mn2+ transition was observed at high Mn concentrations. Single dot spectroscopy was carried out by confocal microscopy and the PL linewidth was measured as a function of Mn concentration. At high Mn concentrations the temporal change in magnetization causes a broadening of the FWHM of lines from single dots of up to 4 meV. However, for low concentrations single dot PL linewidths were resolution limited at <0.2 meV. © 2002 Elsevier Science B.V. All rights reserved.
Original language | English |
---|---|
Pages (from-to) | 586-590 |
Number of pages | 5 |
Journal | Journal of Crystal Growth |
Volume | 251 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - Apr 2003 |
Event | Proceedings of the Molecular Beam Epitaxy 2002 - San Francisco, CA, United States Duration: 15 Sept 2002 → 20 Sept 2002 |
Keywords
- A1. Atomic force microscopy
- A1. Nanostructures
- A3. Atomic layer epitaxy
- A3. Molecular beam epitaxy
- B2. Semiconducting II-VI materials