Graphene-diamond hybrid material and method for preparing same using chemical vapor deposition

J. K. Lee (Inventor), S. C. Lee (Inventor), Phillip John (Inventor), W. S. Lee (Inventor), J. K. Lee (Inventor)

Research output: Patent

Abstract

Disclosed herein are a graphene hybrid material and a method for preparing the graphene hybrid material, the graphene hybrid material comprising: a matrix having lattice planes disconnected on a surface thereof; and layers of graphene which are epitaxially grown along the lattice planes disconnected on the surface of the matrix such that the layers of graphene are oriented perpendicularly to the matrix, and which are spaced apart from each other and layered on the matrix in the same shape. The graphene hybrid material can be usefully used in the fields of next-generation semiconductor devices, biosensors, electrochemical electrodes and the like.
Original languageEnglish
Patent numberUS 7,776.445 B2
Priority date14/08/07
Filing date14/08/08
Publication statusPublished - 17 Aug 2010

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  • Cite this

    Lee, J. K., Lee, S. C., John, P., Lee, W. S., & Lee, J. K. (2010). Graphene-diamond hybrid material and method for preparing same using chemical vapor deposition. (Patent No. US 7,776.445 B2).