Gigahertz bandwidth electrical control over a dark exciton-based memory bit in a single quantum dot

J. McFarlane, P. A. Dalgarno, B. D. Gerardot, R. H. Hadfield, R. J. Warburton, K. Karrai, A. Badolato, P. M. Petroff

Research output: Contribution to journalArticle

33 Citations (Scopus)

Abstract

An optical write-store-read process is demonstrated in a single InGaAs quantum dot within a charge-tunable device. A single dark exciton is created by nongeminate optical excitation allowing a dark exciton-based memory bit to be stored for over ~1 µs. Read-out is performed with a gigahertz bandwidth electrical pulse, forcing an electron spin-flip followed by recombination as a bright neutral exciton, or by charging with an additional electron followed by a recombination as a negative trion. These processes have been used to determine accurately the dark exciton spin-flip lifetime as it varies with static electric field. © 2009 American Institute of Physics.

Original languageEnglish
Article number093113
Pages (from-to)-
Number of pages3
JournalApplied Physics Letters
Volume94
Issue number9
DOIs
Publication statusPublished - 2 Mar 2009

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