Abstract
We present the fabrication and low-temperature electron transport measurements of circuits consisting of a single-island single-electron transistor monitoring an isolated double quantum-dot for a range of devices with different double quantum-dot geometries. Devices are fabricated in highly doped silicon-on-insulator, using electron beam lithography and reactive ion etching resulting in 'trench isolated' circuit elements that are capacitively coupled. We observe polarization of the isolated double quantum-dots as a function of the side gate potentials through changes in the single-electron transistor conduction characteristics. Polarization characteristics are seen to vary systematically with double quantum-dot geometry, which is attributed to the energy level structure of the isolated double quantum dot.
Original language | English |
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Pages (from-to) | 195-200 |
Number of pages | 6 |
Journal | Microelectronic Engineering |
Volume | 78-79 |
DOIs | |
Publication status | Published - Mar 2005 |
Keywords
- Coulomb blockade
- Double quantum-dot
- Quantum computer
- Qubit
- Single-electron
ASJC Scopus subject areas
- Electronic, Optical and Magnetic Materials
- Atomic and Molecular Physics, and Optics
- Condensed Matter Physics
- Surfaces, Coatings and Films
- Electrical and Electronic Engineering