Geometry dependence of the energy levels in silicon isolated double quantum-dots

M. G. Tanner*, E. G. Emiroglu, D. G. Hasko, D. A. Williams

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

3 Citations (Scopus)


We present the fabrication and low-temperature electron transport measurements of circuits consisting of a single-island single-electron transistor monitoring an isolated double quantum-dot for a range of devices with different double quantum-dot geometries. Devices are fabricated in highly doped silicon-on-insulator, using electron beam lithography and reactive ion etching resulting in 'trench isolated' circuit elements that are capacitively coupled. We observe polarization of the isolated double quantum-dots as a function of the side gate potentials through changes in the single-electron transistor conduction characteristics. Polarization characteristics are seen to vary systematically with double quantum-dot geometry, which is attributed to the energy level structure of the isolated double quantum dot.

Original languageEnglish
Pages (from-to)195-200
Number of pages6
JournalMicroelectronic Engineering
Publication statusPublished - Mar 2005


  • Coulomb blockade
  • Double quantum-dot
  • Quantum computer
  • Qubit
  • Single-electron

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering


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