Geometry dependence of the energy levels in silicon isolated double quantum-dots

M. G. Tanner, E. G. Emiroglu, D. G. Hasko, D. A. Williams

Research output: Contribution to journalArticle

Abstract

We present the fabrication and low-temperature electron transport measurements of circuits consisting of a single-island single-electron transistor monitoring an isolated double quantum-dot for a range of devices with different double quantum-dot geometries. Devices are fabricated in highly doped silicon-on-insulator, using electron beam lithography and reactive ion etching resulting in 'trench isolated' circuit elements that are capacitively coupled. We observe polarization of the isolated double quantum-dots as a function of the side gate potentials through changes in the single-electron transistor conduction characteristics. Polarization characteristics are seen to vary systematically with double quantum-dot geometry, which is attributed to the energy level structure of the isolated double quantum dot.

Original languageEnglish
Pages (from-to)195-200
Number of pages6
JournalMicroelectronic Engineering
Volume78-79
DOIs
Publication statusPublished - Mar 2005

Fingerprint

Silicon
Electron energy levels
Semiconductor quantum dots
energy levels
quantum dots
Geometry
Single electron transistors
silicon
geometry
single electron transistors
Polarization
polarization characteristics
Electron beam lithography
Networks (circuits)
Reactive ion etching
lithography
insulators
etching
electron beams
conduction

Keywords

  • Coulomb blockade
  • Double quantum-dot
  • Quantum computer
  • Qubit
  • Single-electron

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Atomic and Molecular Physics, and Optics
  • Condensed Matter Physics
  • Surfaces, Coatings and Films
  • Electrical and Electronic Engineering

Cite this

Tanner, M. G. ; Emiroglu, E. G. ; Hasko, D. G. ; Williams, D. A. / Geometry dependence of the energy levels in silicon isolated double quantum-dots. In: Microelectronic Engineering. 2005 ; Vol. 78-79. pp. 195-200.
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Geometry dependence of the energy levels in silicon isolated double quantum-dots. / Tanner, M. G.; Emiroglu, E. G.; Hasko, D. G.; Williams, D. A.

In: Microelectronic Engineering, Vol. 78-79, 03.2005, p. 195-200.

Research output: Contribution to journalArticle

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AU - Tanner, M. G.

AU - Emiroglu, E. G.

AU - Hasko, D. G.

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