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GaInNAs(Sb) surface normal devices

  • S. Calvez*
  • , N. Laurand
  • , H. D. Sun
  • , J. Weda
  • , D. Burns
  • , M. D. Dawson
  • , A. Harkonen
  • , T. Jouhti
  • , M. Pessa
  • , M. Hopkinson
  • , D. Poitras
  • , J. A. Gupta
  • , C. G. Leburn
  • , C. T. A. Brown
  • , W. Sibbett
  • *Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

Abstract

After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original languageEnglish
Pages (from-to)85-92
Number of pages8
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume205
Issue number1
DOIs
Publication statusPublished - Jan 2008
Event2nd Workshop on Impurity Based Electroluminescent Devices and Materials - Nanki Shirahama, Japan
Duration: 17 Oct 2006 → 20 Oct 2006

Keywords

  • Bragg reflector
  • optical-properties
  • 1.3 MU-M
  • room-temperature
  • mode-locking
  • chemical-vapor-deposition
  • quantum-wells
  • emitting lasers
  • semiconductor saturable-absorber
  • continuous-wave operation

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