GaInNAs(Sb) surface normal devices

S. Calvez; N. Laurand; H. D. Sun; J. Weda; D. Burns; M. D. Dawson; A. Harkonen; T. Jouhti; M. Pessa; M. Hopkinson; D. Poitras; J. A. Gupta; C. G. Leburn; C. T. A. Brown; W. Sibbett

doi:10.1002/pssa.200777460

GaInNAs(Sb) surface normal devices

S. Calvez^*, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, W. Sibbett

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

11 Citations (Scopus)

Abstract

After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original language	English
Pages (from-to)	85-92
Number of pages	8
Journal	Physica Status Solidi (A) Applications and Materials Science
Volume	205
Issue number	1
DOIs	https://doi.org/10.1002/pssa.200777460
Publication status	Published - Jan 2008
Event	2nd Workshop on Impurity Based Electroluminescent Devices and Materials - Nanki Shirahama, Japan Duration: 17 Oct 2006 → 20 Oct 2006

Keywords

Bragg reflector
optical-properties
1.3 MU-M
room-temperature
mode-locking
chemical-vapor-deposition
quantum-wells
emitting lasers
semiconductor saturable-absorber
continuous-wave operation

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title = "GaInNAs(Sb) surface normal devices",

abstract = "After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs). (c) 2008 WILEY-VCH Verlag GmbH \& Co. KGaA, Weinheim.",

keywords = "Bragg reflector, optical-properties, 1.3 MU-M, room-temperature, mode-locking, chemical-vapor-deposition, quantum-wells, emitting lasers, semiconductor saturable-absorber, continuous-wave operation",

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language = "English",

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T1 - GaInNAs(Sb) surface normal devices

AU - Calvez, S.

AU - Laurand, N.

AU - Sun, H. D.

AU - Weda, J.

AU - Burns, D.

AU - Dawson, M. D.

AU - Harkonen, A.

AU - Jouhti, T.

AU - Pessa, M.

AU - Hopkinson, M.

AU - Poitras, D.

AU - Gupta, J. A.

AU - Leburn, C. G.

AU - Brown, C. T. A.

AU - Sibbett, W.

PY - 2008/1

Y1 - 2008/1

N2 - After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

AB - After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

KW - Bragg reflector

KW - optical-properties

KW - 1.3 MU-M

KW - room-temperature

KW - mode-locking

KW - chemical-vapor-deposition

KW - quantum-wells

KW - emitting lasers

KW - semiconductor saturable-absorber

KW - continuous-wave operation

UR - https://www.scopus.com/pages/publications/38849163010

U2 - 10.1002/pssa.200777460

DO - 10.1002/pssa.200777460

M3 - Article

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SP - 85

EP - 92

JO - Physica Status Solidi (A) Applications and Materials Science

JF - Physica Status Solidi (A) Applications and Materials Science

IS - 1

T2 - 2nd Workshop on Impurity Based Electroluminescent Devices and Materials

Y2 - 17 October 2006 through 20 October 2006

ER -

GaInNAs(Sb) surface normal devices

Abstract

Keywords

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