GaInNAs(Sb) surface normal devices

S. Calvez, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, W. Sibbett

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10 Citations (Scopus)

Abstract

After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original languageEnglish
Pages (from-to)85-92
Number of pages8
JournalPhysica Status Solidi (A) Applications and Materials Science
Volume205
Issue number1
DOIs
Publication statusPublished - Jan 2008
Event2nd Workshop on Impurity Based Electroluminescent Devices and Materials - Nanki Shirahama, Japan
Duration: 17 Oct 200620 Oct 2006

Keywords

  • Bragg reflector
  • optical-properties
  • 1.3 MU-M
  • room-temperature
  • mode-locking
  • chemical-vapor-deposition
  • quantum-wells
  • emitting lasers
  • semiconductor saturable-absorber
  • continuous-wave operation

Cite this

Calvez, S., Laurand, N., Sun, H. D., Weda, J., Burns, D., Dawson, M. D., Harkonen, A., Jouhti, T., Pessa, M., Hopkinson, M., Poitras, D., Gupta, J. A., Leburn, C. G., Brown, C. T. A., & Sibbett, W. (2008). GaInNAs(Sb) surface normal devices. Physica Status Solidi (A) Applications and Materials Science, 205(1), 85-92. https://doi.org/10.1002/pssa.200777460