GaInNAs(Sb) surface normal devices

S. Calvez*, N. Laurand, H. D. Sun, J. Weda, D. Burns, M. D. Dawson, A. Harkonen, T. Jouhti, M. Pessa, M. Hopkinson, D. Poitras, J. A. Gupta, C. G. Leburn, C. T. A. Brown, W. Sibbett

*Corresponding author for this work

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


After a decade of intensive research on GaInNAs(Sb) on GaAs alloys, this paper summarizes some of the key properties of these III-V alloys and presents current progress in their exploitation in a variety of surface-normal operating devices such as Vertical (External)-Cavity Surface-Emitting Lasers (V(E)CSELs) and SEmiconductor Saturable Absorber Mirrors (SESAMs). (c) 2008 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.

Original languageEnglish
Pages (from-to)85-92
Number of pages8
JournalPhysica Status Solidi (A) Applications and Materials Science
Issue number1
Publication statusPublished - Jan 2008
Event2nd Workshop on Impurity Based Electroluminescent Devices and Materials - Nanki Shirahama, Japan
Duration: 17 Oct 200620 Oct 2006


  • Bragg reflector
  • optical-properties
  • 1.3 MU-M
  • room-temperature
  • mode-locking
  • chemical-vapor-deposition
  • quantum-wells
  • emitting lasers
  • semiconductor saturable-absorber
  • continuous-wave operation


Dive into the research topics of 'GaInNAs(Sb) surface normal devices'. Together they form a unique fingerprint.

Cite this