This study reports the design and experimental results of a fully-passive solid-state RF switch based on the Conductive Bridging Memory Technology, popularly known as CBRAM. The developed device is a shunt mode RF switch based on a Metal-Insulator-Metal (MIM) structure with Copper - Nafion - Aluminum switching layers on a Coplanar Waveguide (CPW) transmission line, operational in the DC to 3GHz range. DC pulses in the range +12V to -20 V are used to operate the switch. The design is initially simulated using the FEM based CST microwave Studio and then realized and validated on a low cost FR4 substrate, and without using any sophisticated clean room technology.
|Title of host publication||XXXIInd General Assembly and Scientific Symposium of the International Union of Radio Science 2017|
|Publication status||Published - 13 Nov 2017|
|Event||XXXIInd General Assembly and Scientific Symposium of the International Union of Radio Science 2017 - Montreal, QC|
Duration: 19 Aug 2017 → 26 Aug 2017
|Conference||XXXIInd General Assembly and Scientific Symposium of the International Union of Radio Science 2017|
|Abbreviated title||URSI GASS 2017|
|Period||19/08/17 → 26/08/17|