Fully Passive Conductive-Bridging Solid State RF Switch

M. P. Jayakrishnan; Arnaud Vena; Brice Sorli; Etienne Perret

doi:10.23919/URSIGASS.2017.8105259

Fully Passive Conductive-Bridging Solid State RF Switch

M. P. Jayakrishnan, Arnaud Vena, Brice Sorli, Etienne Perret

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

Abstract

This study reports the design and experimental results of a fully-passive solid-state RF switch based on the Conductive Bridging Memory Technology, popularly known as CBRAM. The developed device is a shunt mode RF switch based on a Metal-Insulator-Metal (MIM) structure with Copper - Nafion - Aluminum switching layers on a Coplanar Waveguide (CPW) transmission line, operational in the DC to 3GHz range. DC pulses in the range +12V to -20 V are used to operate the switch. The design is initially simulated using the FEM based CST microwave Studio and then realized and validated on a low cost FR4 substrate, and without using any sophisticated clean room technology.

Original language	English
Title of host publication	XXXIInd General Assembly and Scientific Symposium of the International Union of Radio Science 2017
Publisher	IEEE
ISBN (Electronic)	9789082598704
DOIs	https://doi.org/10.23919/URSIGASS.2017.8105259
Publication status	Published - 13 Nov 2017
Event	XXXIInd General Assembly and Scientific Symposium of the International Union of Radio Science 2017 - Montreal, QC Duration: 19 Aug 2017 → 26 Aug 2017

Conference

Conference	XXXIInd General Assembly and Scientific Symposium of the International Union of Radio Science 2017
Abbreviated title	URSI GASS 2017
Period	19/08/17 → 26/08/17

Access to Document

10.23919/URSIGASS.2017.8105259

Cite this

@inproceedings{87094d3056564fd795c9e40696167861,

title = "Fully Passive Conductive-Bridging Solid State RF Switch",

abstract = "This study reports the design and experimental results of a fully-passive solid-state RF switch based on the Conductive Bridging Memory Technology, popularly known as CBRAM. The developed device is a shunt mode RF switch based on a Metal-Insulator-Metal (MIM) structure with Copper - Nafion - Aluminum switching layers on a Coplanar Waveguide (CPW) transmission line, operational in the DC to 3GHz range. DC pulses in the range +12V to -20 V are used to operate the switch. The design is initially simulated using the FEM based CST microwave Studio and then realized and validated on a low cost FR4 substrate, and without using any sophisticated clean room technology.",

author = "Jayakrishnan, {M. P.} and Arnaud Vena and Brice Sorli and Etienne Perret",

year = "2017",

month = nov,

day = "13",

doi = "10.23919/URSIGASS.2017.8105259",

language = "English",

booktitle = "XXXIInd General Assembly and Scientific Symposium of the International Union of Radio Science 2017",

publisher = "IEEE",

address = "United States",

note = "XXXIInd General Assembly and Scientific Symposium of the International Union of Radio Science 2017, URSI GASS 2017 ; Conference date: 19-08-2017 Through 26-08-2017",

}

Jayakrishnan, MP, Vena, A, Sorli, B & Perret, E 2017, Fully Passive Conductive-Bridging Solid State RF Switch. in XXXIInd General Assembly and Scientific Symposium of the International Union of Radio Science 2017., 8105259, IEEE, XXXIInd General Assembly and Scientific Symposium of the International Union of Radio Science 2017, 19/08/17. https://doi.org/10.23919/URSIGASS.2017.8105259

TY - GEN

T1 - Fully Passive Conductive-Bridging Solid State RF Switch

AU - Jayakrishnan, M. P.

AU - Vena, Arnaud

AU - Sorli, Brice

AU - Perret, Etienne

PY - 2017/11/13

Y1 - 2017/11/13

N2 - This study reports the design and experimental results of a fully-passive solid-state RF switch based on the Conductive Bridging Memory Technology, popularly known as CBRAM. The developed device is a shunt mode RF switch based on a Metal-Insulator-Metal (MIM) structure with Copper - Nafion - Aluminum switching layers on a Coplanar Waveguide (CPW) transmission line, operational in the DC to 3GHz range. DC pulses in the range +12V to -20 V are used to operate the switch. The design is initially simulated using the FEM based CST microwave Studio and then realized and validated on a low cost FR4 substrate, and without using any sophisticated clean room technology.

AB - This study reports the design and experimental results of a fully-passive solid-state RF switch based on the Conductive Bridging Memory Technology, popularly known as CBRAM. The developed device is a shunt mode RF switch based on a Metal-Insulator-Metal (MIM) structure with Copper - Nafion - Aluminum switching layers on a Coplanar Waveguide (CPW) transmission line, operational in the DC to 3GHz range. DC pulses in the range +12V to -20 V are used to operate the switch. The design is initially simulated using the FEM based CST microwave Studio and then realized and validated on a low cost FR4 substrate, and without using any sophisticated clean room technology.

U2 - 10.23919/URSIGASS.2017.8105259

DO - 10.23919/URSIGASS.2017.8105259

M3 - Conference contribution

BT - XXXIInd General Assembly and Scientific Symposium of the International Union of Radio Science 2017

PB - IEEE

T2 - XXXIInd General Assembly and Scientific Symposium of the International Union of Radio Science 2017

Y2 - 19 August 2017 through 26 August 2017

ER -

Fully Passive Conductive-Bridging Solid State RF Switch

Abstract

Conference

Access to Document

Fingerprint

Cite this