We report measurements on the frequency-dependence of the critical switching irradiance and power level of an InSb bistable etalon. The switching power level of 1.9 mW has been measured at laser frequencies close to the band edge of InSb. A comprehensive theoretical discussion, including density-dependent recombination rates, saturation of the refractive cross-section, free carrier absorption, bandgap renormalisation and transverse effects explains the experimental dependencies and supports the procedure currently being used to optimise bistable cavities for low power switching. © 1986.
|Number of pages||6|
|Publication status||Published - 15 Jul 1986|