Frequency optimisation of InSb, optically-bistable elements

H. A. Al Attar, D. Hutchings, D. Russell, A. C. Walker, H. A. Mackenzie, B. S. Wherrett

Research output: Contribution to journalArticle

Abstract

We report measurements on the frequency-dependence of the critical switching irradiance and power level of an InSb bistable etalon. The switching power level of 1.9 mW has been measured at laser frequencies close to the band edge of InSb. A comprehensive theoretical discussion, including density-dependent recombination rates, saturation of the refractive cross-section, free carrier absorption, bandgap renormalisation and transverse effects explains the experimental dependencies and supports the procedure currently being used to optimise bistable cavities for low power switching. © 1986.

Original languageEnglish
Pages (from-to)433-438
Number of pages6
JournalOptics Communications
Volume58
Issue number6
Publication statusPublished - 15 Jul 1986

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    Al Attar, H. A., Hutchings, D., Russell, D., Walker, A. C., Mackenzie, H. A., & Wherrett, B. S. (1986). Frequency optimisation of InSb, optically-bistable elements. Optics Communications, 58(6), 433-438.