Frequency optimisation of InSb, optically-bistable elements

H. A. Al Attar; D. Hutchings; D. Russell; A. C. Walker; H. A. Mackenzie; B. S. Wherrett

Frequency optimisation of InSb, optically-bistable elements

H. A. Al Attar, D. Hutchings, D. Russell, A. C. Walker, H. A. Mackenzie, B. S. Wherrett

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

9 Citations (Scopus)

Abstract

We report measurements on the frequency-dependence of the critical switching irradiance and power level of an InSb bistable etalon. The switching power level of 1.9 mW has been measured at laser frequencies close to the band edge of InSb. A comprehensive theoretical discussion, including density-dependent recombination rates, saturation of the refractive cross-section, free carrier absorption, bandgap renormalisation and transverse effects explains the experimental dependencies and supports the procedure currently being used to optimise bistable cavities for low power switching. © 1986.

Original language	English
Pages (from-to)	433-438
Number of pages	6
Journal	Optics Communications
Volume	58
Issue number	6
Publication status	Published - 15 Jul 1986

Cite this

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title = "Frequency optimisation of InSb, optically-bistable elements",

abstract = "We report measurements on the frequency-dependence of the critical switching irradiance and power level of an InSb bistable etalon. The switching power level of 1.9 mW has been measured at laser frequencies close to the band edge of InSb. A comprehensive theoretical discussion, including density-dependent recombination rates, saturation of the refractive cross-section, free carrier absorption, bandgap renormalisation and transverse effects explains the experimental dependencies and supports the procedure currently being used to optimise bistable cavities for low power switching. {\textcopyright} 1986.",

author = "{Al Attar}, {H. A.} and D. Hutchings and D. Russell and Walker, {A. C.} and Mackenzie, {H. A.} and Wherrett, {B. S.}",

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AU - Al Attar, H. A.

AU - Hutchings, D.

AU - Russell, D.

AU - Walker, A. C.

AU - Mackenzie, H. A.

AU - Wherrett, B. S.

PY - 1986/7/15

Y1 - 1986/7/15

N2 - We report measurements on the frequency-dependence of the critical switching irradiance and power level of an InSb bistable etalon. The switching power level of 1.9 mW has been measured at laser frequencies close to the band edge of InSb. A comprehensive theoretical discussion, including density-dependent recombination rates, saturation of the refractive cross-section, free carrier absorption, bandgap renormalisation and transverse effects explains the experimental dependencies and supports the procedure currently being used to optimise bistable cavities for low power switching. © 1986.

AB - We report measurements on the frequency-dependence of the critical switching irradiance and power level of an InSb bistable etalon. The switching power level of 1.9 mW has been measured at laser frequencies close to the band edge of InSb. A comprehensive theoretical discussion, including density-dependent recombination rates, saturation of the refractive cross-section, free carrier absorption, bandgap renormalisation and transverse effects explains the experimental dependencies and supports the procedure currently being used to optimise bistable cavities for low power switching. © 1986.

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M3 - Article

SN - 0030-4018

VL - 58

SP - 433

EP - 438

JO - Optics Communications

JF - Optics Communications

IS - 6

ER -

Frequency optimisation of InSb, optically-bistable elements

Abstract

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