Free-running, room temperature operation of an InGaAs/InP single-photon avalanche diode

Ryan E. Warburton; Mark Itzler; Gerald S. Buller

doi:10.1063/1.3079668

Free-running, room temperature operation of an InGaAs/InP single-photon avalanche diode

Ryan E. Warburton, Mark Itzler, Gerald S. Buller

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

78 Citations (Scopus)

Abstract

Passive quenching operation of an InGaAs/InP single-photon avalanche diode detector at low excess bias is reported in terms of the key figures of merit including afterpulsing analysis. The reduced charge required to measure individual photon events meant that room temperature single-photon counting at 1550 nm wavelength was achievable without the requirement of electrical gating and with negligible afterpulsing effects evident. © 2009 American Institute of Physics.

Original language	English
Article number	071116
Journal	Applied Physics Letters
Volume	94
Issue number	7
DOIs	https://doi.org/10.1063/1.3079668
Publication status	Published - 2009

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title = "Free-running, room temperature operation of an InGaAs/InP single-photon avalanche diode",

abstract = "Passive quenching operation of an InGaAs/InP single-photon avalanche diode detector at low excess bias is reported in terms of the key figures of merit including afterpulsing analysis. The reduced charge required to measure individual photon events meant that room temperature single-photon counting at 1550 nm wavelength was achievable without the requirement of electrical gating and with negligible afterpulsing effects evident. {\textcopyright} 2009 American Institute of Physics.",

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AU - Warburton, Ryan E.

AU - Itzler, Mark

AU - Buller, Gerald S.

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Y1 - 2009

N2 - Passive quenching operation of an InGaAs/InP single-photon avalanche diode detector at low excess bias is reported in terms of the key figures of merit including afterpulsing analysis. The reduced charge required to measure individual photon events meant that room temperature single-photon counting at 1550 nm wavelength was achievable without the requirement of electrical gating and with negligible afterpulsing effects evident. © 2009 American Institute of Physics.

AB - Passive quenching operation of an InGaAs/InP single-photon avalanche diode detector at low excess bias is reported in terms of the key figures of merit including afterpulsing analysis. The reduced charge required to measure individual photon events meant that room temperature single-photon counting at 1550 nm wavelength was achievable without the requirement of electrical gating and with negligible afterpulsing effects evident. © 2009 American Institute of Physics.

U2 - 10.1063/1.3079668

DO - 10.1063/1.3079668

M3 - Article

SN - 0003-6951

VL - 94

JO - Applied Physics Letters

JF - Applied Physics Letters

IS - 7

M1 - 071116

ER -

Free-running, room temperature operation of an InGaAs/InP single-photon avalanche diode

Abstract

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