Free electron laser study of the suppression of non-radiative scattering processes in semiconductors

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Abstract

A brief review is given of pump-probe studies of far infrared inter-sub-level relaxation between conduction band states in doped `quasi' quantum dots (created by the application of a magnetic field along the growth direction of an InAs/AlSb quantum well) and of mid-infrared (MIR) interband recombination in narrow gap semiconductors, using the free electron laser at FOM-Rijnhuizen (FELIX). In the former case, the longitudinal optic (LO) phonon scattering rate is shown to be suppressed by a factor of about 100 when the Landau level separation is off-resonance with the optical phonon energy; in the latter case, Auger recombination is shown to be substantially suppressed in the lead salts due to their `mirror' energy band structure.

Original languageEnglish
Pages (from-to)231-238
Number of pages8
JournalInfrared Physics and Technology
Volume40
Issue number3
DOIs
Publication statusPublished - Jun 1999

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