Free-electron laser studies of energy transfer mechanisms in semiconductors doped with transition series ions

M. Forcales, M. Klik, N. Q. Vinh, I. V. Bradley, J. P R Wells, T. Gregorkiewicz

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    5 Citations (Scopus)

    Abstract

    Shallow levels determine electrical and optical properties of semiconductors. Mid-infrared radiation from a free-electron laser can be used for an effective ionization of shallow impurities, leading to a variety of effects. In contrast to thermal ionization, the optically induced ionization process can be tuned to a particular level by adjusting the wavelength. In this way, different impurity and defect levels can be selectively addressed. The short-pulsed output of the free-electron laser allows the experiments to be performed in a manner, which utilizes its unique characteristics. In this contribution, we show how two-color spectroscopy with a free-electron laser can be used to unravel energy transfer between different centers in semiconductor matrices. In particular, energy storage at shallow centers in silicon and mid-infrared-induced Auger recombination process of long-living optically active centers will be discussed. Specific examples for rare earth- and transition metal-doped silicon and rare earth-doped III-V semiconductors will be presented. © 2001 Elsevier Science B.V. All rights reserved.

    Original languageEnglish
    Pages (from-to)243-248
    Number of pages6
    JournalJournal of Luminescence
    Volume94-95
    DOIs
    Publication statusPublished - Dec 2001

    Keywords

    • Energy transfer
    • Free-electron laser
    • Photoluminescence
    • Rare-earth ions
    • Semiconductors

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    Forcales, M., Klik, M., Vinh, N. Q., Bradley, I. V., Wells, J. P. R., & Gregorkiewicz, T. (2001). Free-electron laser studies of energy transfer mechanisms in semiconductors doped with transition series ions. Journal of Luminescence, 94-95, 243-248. https://doi.org/10.1016/S0022-2313(01)00287-3