Free electron laser-induced bleaching of the intersubband absorption in semiconductor quantum wells

B. N. Murdin; M. Helm; C. R. Pidgeon; K. K. Geerinck; N. Hovenyer; W. Th Wenckebach; A. F G van der Meer; P. W. van Amersfoort

Free electron laser-induced bleaching of the intersubband absorption in semiconductor quantum wells

B. N. Murdin, M. Helm, C. R. Pidgeon, K. K. Geerinck, N. Hovenyer, W. Th Wenckebach, A. F G van der Meer, P. W. van Amersfoort

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

2 Citations (Scopus)

Abstract

The intensity dependent intersubband absorption in GaAs/AlGaAs quantum wells with a subband separation smaller than the optical phonon energy has been measured with a pulsed far infrared free electron laser (FELIX). Complete bleaching of the absorption is observed at I = 100 kW/cm². When fitted with a two-level system, the saturation intensity is found to be 10 kW/cm², which corresponds to a characteristic time constant of 1-2 ps. Possible interpretations are discussed in the situation of finite FEL pulse width. © 1994.

Original language	English
Pages (from-to)	178-180
Number of pages	3
Journal	Nuclear Inst. and Methods in Physics Research, A
Volume	341
Issue number	1-3
Publication status	Published - 1 Mar 1994

Cite this

@article{aa62db11cfe64697a5d58d6959af8c54,

title = "Free electron laser-induced bleaching of the intersubband absorption in semiconductor quantum wells",

abstract = "The intensity dependent intersubband absorption in GaAs/AlGaAs quantum wells with a subband separation smaller than the optical phonon energy has been measured with a pulsed far infrared free electron laser (FELIX). Complete bleaching of the absorption is observed at I = 100 kW/cm2. When fitted with a two-level system, the saturation intensity is found to be 10 kW/cm2, which corresponds to a characteristic time constant of 1-2 ps. Possible interpretations are discussed in the situation of finite FEL pulse width. {\textcopyright} 1994.",

author = "Murdin, {B. N.} and M. Helm and Pidgeon, {C. R.} and Geerinck, {K. K.} and N. Hovenyer and Wenckebach, {W. Th} and {van der Meer}, {A. F G} and {van Amersfoort}, {P. W.}",

year = "1994",

month = mar,

day = "1",

language = "English",

volume = "341",

pages = "178--180",

journal = "Nuclear Inst. and Methods in Physics Research, A",

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TY - JOUR

T1 - Free electron laser-induced bleaching of the intersubband absorption in semiconductor quantum wells

AU - Murdin, B. N.

AU - Helm, M.

AU - Pidgeon, C. R.

AU - Geerinck, K. K.

AU - Hovenyer, N.

AU - Wenckebach, W. Th

AU - van der Meer, A. F G

AU - van Amersfoort, P. W.

PY - 1994/3/1

Y1 - 1994/3/1

N2 - The intensity dependent intersubband absorption in GaAs/AlGaAs quantum wells with a subband separation smaller than the optical phonon energy has been measured with a pulsed far infrared free electron laser (FELIX). Complete bleaching of the absorption is observed at I = 100 kW/cm2. When fitted with a two-level system, the saturation intensity is found to be 10 kW/cm2, which corresponds to a characteristic time constant of 1-2 ps. Possible interpretations are discussed in the situation of finite FEL pulse width. © 1994.

AB - The intensity dependent intersubband absorption in GaAs/AlGaAs quantum wells with a subband separation smaller than the optical phonon energy has been measured with a pulsed far infrared free electron laser (FELIX). Complete bleaching of the absorption is observed at I = 100 kW/cm2. When fitted with a two-level system, the saturation intensity is found to be 10 kW/cm2, which corresponds to a characteristic time constant of 1-2 ps. Possible interpretations are discussed in the situation of finite FEL pulse width. © 1994.

UR - http://www.scopus.com/inward/record.url?scp=0028383555&partnerID=8YFLogxK

M3 - Article

SN - 0168-9002

VL - 341

SP - 178

EP - 180

JO - Nuclear Inst. and Methods in Physics Research, A

JF - Nuclear Inst. and Methods in Physics Research, A

IS - 1-3

ER -

Free electron laser-induced bleaching of the intersubband absorption in semiconductor quantum wells

Abstract

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