Fine Structure of Highly Charged Excitons in Semiconductor Quantum Dots

B. Urbaszek, R. J. Warburton, K. Karrai, B. D. Gerardot, P. M. Petroff, J. M. Garcia

Research output: Contribution to journalArticle

Abstract

An exciton in a symmetric semiconductor quantum dot has two possible states, one dark and one bright, split in energy by the electron-hole exchange interaction. We demonstrate that for a doubly charged exciton, there are also two states split by the electron-hole exchange, but both states are now bright. We also uncover a fine structure in the emission from the triply charged exciton. By measuring these splittings, and also those from the singly charged and doubly charged biexcitons, all on the same quantum dot, we show how the various electron-hole exchange energies can be measured without having to break the symmetry of the dot.

Original languageEnglish
Article number247403
JournalPhysical Review Letters
Volume90
Issue number24
DOIs
Publication statusPublished - 19 Jun 2003

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fine structure
quantum dots
excitons
energy transfer
symmetry
interactions
energy

ASJC Scopus subject areas

  • Physics and Astronomy(all)

Cite this

Urbaszek, B., Warburton, R. J., Karrai, K., Gerardot, B. D., Petroff, P. M., & Garcia, J. M. (2003). Fine Structure of Highly Charged Excitons in Semiconductor Quantum Dots. Physical Review Letters, 90(24), [247403]. https://doi.org/10.1103/PhysRevLett.90.247403
Urbaszek, B. ; Warburton, R. J. ; Karrai, K. ; Gerardot, B. D. ; Petroff, P. M. ; Garcia, J. M. / Fine Structure of Highly Charged Excitons in Semiconductor Quantum Dots. In: Physical Review Letters. 2003 ; Vol. 90, No. 24.
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Fine Structure of Highly Charged Excitons in Semiconductor Quantum Dots. / Urbaszek, B.; Warburton, R. J.; Karrai, K.; Gerardot, B. D.; Petroff, P. M.; Garcia, J. M.

In: Physical Review Letters, Vol. 90, No. 24, 247403, 19.06.2003.

Research output: Contribution to journalArticle

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