Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

Tetsuo Kodera; Thierry Ferrus; Toshihiro Nakaoka; Gareth Podd; Michael Tanner; David Williams; Yasuhiko Arakawa

doi:10.1143/JJAP.48.06FF15

Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

Tetsuo Kodera^*, Thierry Ferrus, Toshihiro Nakaoka, Gareth Podd, Michael Tanner, David Williams, Yasuhiko Arakawa

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

12 Citations (Scopus)

Abstract

We experimentally study the transport properties of silicon quantum dots(QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor(LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.

Original language	English
Article number	06FF15
Journal	Japanese Journal of Applied Physics
Volume	48
Issue number	6S
DOIs	https://doi.org/10.1143/JJAP.48.06FF15
Publication status	Published - 22 Jun 2009

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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abstract = "We experimentally study the transport properties of silicon quantum dots(QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor(LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.",

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AU - Kodera, Tetsuo

AU - Ferrus, Thierry

AU - Nakaoka, Toshihiro

AU - Podd, Gareth

AU - Tanner, Michael

AU - Williams, David

AU - Arakawa, Yasuhiko

PY - 2009/6/22

Y1 - 2009/6/22

N2 - We experimentally study the transport properties of silicon quantum dots(QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor(LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.

AB - We experimentally study the transport properties of silicon quantum dots(QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor(LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.

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JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 6S

M1 - 06FF15

ER -

Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

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