Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

Tetsuo Kodera, Thierry Ferrus, Toshihiro Nakaoka, Gareth Podd, Michael Tanner, David Williams, Yasuhiko Arakawa

Research output: Contribution to journalArticle

Abstract

We experimentally study the transport properties of silicon quantum dots(QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor(LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.

Original languageEnglish
Article number06FF15
JournalJapanese Journal of Applied Physics
Volume48
Issue number6S
DOIs
Publication statusPublished - 22 Jun 2009

Fingerprint

Semiconductor quantum dots
Diamonds
diamonds
quantum dots
Silicon
silicon
liquid helium
Transport properties
low noise
electrical measurement
Helium
periodic variations
CMOS
amplifiers
transport properties
fine structure
insulators
wafers
oscillations
Liquids

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

Cite this

Kodera, T., Ferrus, T., Nakaoka, T., Podd, G., Tanner, M., Williams, D., & Arakawa, Y. (2009). Fine and Large Coulomb Diamonds in a Silicon Quantum Dot. Japanese Journal of Applied Physics, 48(6S), [06FF15]. https://doi.org/10.1143/JJAP.48.06FF15
Kodera, Tetsuo ; Ferrus, Thierry ; Nakaoka, Toshihiro ; Podd, Gareth ; Tanner, Michael ; Williams, David ; Arakawa, Yasuhiko. / Fine and Large Coulomb Diamonds in a Silicon Quantum Dot. In: Japanese Journal of Applied Physics. 2009 ; Vol. 48, No. 6S.
@article{6e41d02c410a4183a92cfb8fafb6f910,
title = "Fine and Large Coulomb Diamonds in a Silicon Quantum Dot",
abstract = "We experimentally study the transport properties of silicon quantum dots(QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor(LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.",
author = "Tetsuo Kodera and Thierry Ferrus and Toshihiro Nakaoka and Gareth Podd and Michael Tanner and David Williams and Yasuhiko Arakawa",
year = "2009",
month = "6",
day = "22",
doi = "10.1143/JJAP.48.06FF15",
language = "English",
volume = "48",
journal = "Japanese Journal of Applied Physics",
issn = "0021-4922",
publisher = "Japan Society of Applied Physics",
number = "6S",

}

Kodera, T, Ferrus, T, Nakaoka, T, Podd, G, Tanner, M, Williams, D & Arakawa, Y 2009, 'Fine and Large Coulomb Diamonds in a Silicon Quantum Dot', Japanese Journal of Applied Physics, vol. 48, no. 6S, 06FF15. https://doi.org/10.1143/JJAP.48.06FF15

Fine and Large Coulomb Diamonds in a Silicon Quantum Dot. / Kodera, Tetsuo; Ferrus, Thierry; Nakaoka, Toshihiro; Podd, Gareth; Tanner, Michael; Williams, David; Arakawa, Yasuhiko.

In: Japanese Journal of Applied Physics, Vol. 48, No. 6S, 06FF15, 22.06.2009.

Research output: Contribution to journalArticle

TY - JOUR

T1 - Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

AU - Kodera, Tetsuo

AU - Ferrus, Thierry

AU - Nakaoka, Toshihiro

AU - Podd, Gareth

AU - Tanner, Michael

AU - Williams, David

AU - Arakawa, Yasuhiko

PY - 2009/6/22

Y1 - 2009/6/22

N2 - We experimentally study the transport properties of silicon quantum dots(QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor(LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.

AB - We experimentally study the transport properties of silicon quantum dots(QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor(LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.

UR - http://www.scopus.com/inward/record.url?scp=70249114451&partnerID=8YFLogxK

U2 - 10.1143/JJAP.48.06FF15

DO - 10.1143/JJAP.48.06FF15

M3 - Article

VL - 48

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

SN - 0021-4922

IS - 6S

M1 - 06FF15

ER -