Abstract
We experimentally study the transport properties of silicon quantum dots(QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor(LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.
| Original language | English |
|---|---|
| Article number | 06FF15 |
| Journal | Japanese Journal of Applied Physics |
| Volume | 48 |
| Issue number | 6S |
| DOIs | |
| Publication status | Published - 22 Jun 2009 |
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ASJC Scopus subject areas
- Engineering(all)
- Physics and Astronomy(all)
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Fine and Large Coulomb Diamonds in a Silicon Quantum Dot. / Kodera, Tetsuo; Ferrus, Thierry; Nakaoka, Toshihiro; Podd, Gareth; Tanner, Michael; Williams, David; Arakawa, Yasuhiko.
In: Japanese Journal of Applied Physics, Vol. 48, No. 6S, 06FF15, 22.06.2009.Research output: Contribution to journal › Article
TY - JOUR
T1 - Fine and Large Coulomb Diamonds in a Silicon Quantum Dot
AU - Kodera, Tetsuo
AU - Ferrus, Thierry
AU - Nakaoka, Toshihiro
AU - Podd, Gareth
AU - Tanner, Michael
AU - Williams, David
AU - Arakawa, Yasuhiko
PY - 2009/6/22
Y1 - 2009/6/22
N2 - We experimentally study the transport properties of silicon quantum dots(QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor(LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.
AB - We experimentally study the transport properties of silicon quantum dots(QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor(LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.
UR - http://www.scopus.com/inward/record.url?scp=70249114451&partnerID=8YFLogxK
U2 - 10.1143/JJAP.48.06FF15
DO - 10.1143/JJAP.48.06FF15
M3 - Article
VL - 48
JO - Japanese Journal of Applied Physics
JF - Japanese Journal of Applied Physics
SN - 0021-4922
IS - 6S
M1 - 06FF15
ER -