Fine and Large Coulomb Diamonds in a Silicon Quantum Dot

Tetsuo Kodera, Thierry Ferrus, Toshihiro Nakaoka, Gareth Podd, Michael Tanner, David Williams, Yasuhiko Arakawa

Research output: Contribution to journalArticle

Abstract

We experimentally study the transport properties of silicon quantum dots(QDs) fabricated from a highly doped n-type silicon-on-insulator wafer. Low noise electrical measurements using a low temperature complementary metal-oxide-semiconductor(LTCMOS) amplifier are performed at 4.2 K in liquid helium. Two series of Coulomb peaks are observed: long-period oscillations and fine structures, and both of them show clear source drain voltage dependence. We also observe two series of Coulomb diamonds having different periodicity. The obtained experimental results are well reproduced by a master equation analysis using a model of double QDs coupled in parallel.

Original languageEnglish
Article number06FF15
JournalJapanese Journal of Applied Physics
Volume48
Issue number6S
DOIs
Publication statusPublished - 22 Jun 2009

ASJC Scopus subject areas

  • Engineering(all)
  • Physics and Astronomy(all)

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    Kodera, T., Ferrus, T., Nakaoka, T., Podd, G., Tanner, M., Williams, D., & Arakawa, Y. (2009). Fine and Large Coulomb Diamonds in a Silicon Quantum Dot. Japanese Journal of Applied Physics, 48(6S), [06FF15]. https://doi.org/10.1143/JJAP.48.06FF15