Abstract
The operation of a femtosecond Cr4+:YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230fs pulses centred at 1528nm were generated at an average output power of 280mW. The SESAM exhibited a low saturation fluence of 10 mu J/cm(2) and a short recovery time of 12ps. (c) 2008 Optical Society of America
| Original language | English |
|---|---|
| Pages (from-to) | 18739-18744 |
| Number of pages | 6 |
| Journal | Optics Express |
| Volume | 16 |
| Issue number | 23 |
| DOIs | |
| Publication status | Published - 10 Nov 2008 |
Keywords
- solid state lasers
- mode-locking
- semiconductor saturable-absorber
- CR4+-YAG laser