Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM

Nikolaus Klaus Metzger, C. G. Leburn, A. A. Lagatsky, C. T. A. Brown, S. Calvez, D. Burns, H. D. Sun, M. D. Dawson, J. C. Harmand, W. Sibbett

Research output: Contribution to journalArticlepeer-review

11 Citations (Scopus)


The operation of a femtosecond Cr4+:YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230fs pulses centred at 1528nm were generated at an average output power of 280mW. The SESAM exhibited a low saturation fluence of 10 mu J/cm(2) and a short recovery time of 12ps. (c) 2008 Optical Society of America

Original languageEnglish
Pages (from-to)18739-18744
Number of pages6
JournalOptics Express
Issue number23
Publication statusPublished - 10 Nov 2008


  • solid state lasers
  • mode-locking
  • semiconductor saturable-absorber
  • CR4+-YAG laser


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