Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM

Nikolaus Klaus Metzger, C. G. Leburn, A. A. Lagatsky, C. T. A. Brown, S. Calvez, D. Burns, H. D. Sun, M. D. Dawson, J. C. Harmand, W. Sibbett

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The operation of a femtosecond Cr4+:YAG laser that incorporates a novel GaInNAsSb semiconductor saturable Bragg reflector is reported. In the mode-locked regime 230fs pulses centred at 1528nm were generated at an average output power of 280mW. The SESAM exhibited a low saturation fluence of 10 mu J/cm(2) and a short recovery time of 12ps. (c) 2008 Optical Society of America

Original languageEnglish
Pages (from-to)18739-18744
Number of pages6
JournalOptics Express
Issue number23
Publication statusPublished - 10 Nov 2008


  • solid state lasers
  • mode-locking
  • semiconductor saturable-absorber
  • CR4+-YAG laser

Cite this

Metzger, N. K., Leburn, C. G., Lagatsky, A. A., Brown, C. T. A., Calvez, S., Burns, D., Sun, H. D., Dawson, M. D., Harmand, J. C., & Sibbett, W. (2008). Femtosecond pulse generation around 1500nm using a GaInNAsSb SESAM. Optics Express, 16(23), 18739-18744. https://doi.org/10.1364/OE.16.018739