Fast and accurate IGBT model for PSpice

K. Sheng; S. J. Finney; B. W. Williams

Fast and accurate IGBT model for PSpice

K. Sheng, S. J. Finney, B. W. Williams

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

8 Citations (Scopus)

Abstract

A new PSpice IGBT model is presented which combines existing BJT and MOSFET models and equations to give a more realistic drain-gate capacitance model. Electrical simulation performance gives the accuracy of complex equation based models, but involves the computational time of simple inaccurate model based approaches. Simulation and experimental results vindicate the new model.

Original language	English
Pages (from-to)	2294-2295
Number of pages	2
Journal	Electronics Letters
Volume	32
Issue number	25
Publication status	Published - 5 Dec 1996

Keywords

Insulated gate bipolar transistors
SPICE

Cite this

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title = "Fast and accurate IGBT model for PSpice",

abstract = "A new PSpice IGBT model is presented which combines existing BJT and MOSFET models and equations to give a more realistic drain-gate capacitance model. Electrical simulation performance gives the accuracy of complex equation based models, but involves the computational time of simple inaccurate model based approaches. Simulation and experimental results vindicate the new model.",

keywords = "Insulated gate bipolar transistors, SPICE",

author = "K. Sheng and Finney, {S. J.} and Williams, {B. W.}",

year = "1996",

month = dec,

day = "5",

language = "English",

volume = "32",

pages = "2294--2295",

journal = "Electronics Letters",

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publisher = "Institution of Engineering and Technology",

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TY - JOUR

T1 - Fast and accurate IGBT model for PSpice

AU - Sheng, K.

AU - Finney, S. J.

AU - Williams, B. W.

PY - 1996/12/5

Y1 - 1996/12/5

N2 - A new PSpice IGBT model is presented which combines existing BJT and MOSFET models and equations to give a more realistic drain-gate capacitance model. Electrical simulation performance gives the accuracy of complex equation based models, but involves the computational time of simple inaccurate model based approaches. Simulation and experimental results vindicate the new model.

AB - A new PSpice IGBT model is presented which combines existing BJT and MOSFET models and equations to give a more realistic drain-gate capacitance model. Electrical simulation performance gives the accuracy of complex equation based models, but involves the computational time of simple inaccurate model based approaches. Simulation and experimental results vindicate the new model.

KW - Insulated gate bipolar transistors

KW - SPICE

M3 - Article

SN - 0013-5194

VL - 32

SP - 2294

EP - 2295

JO - Electronics Letters

JF - Electronics Letters

IS - 25

ER -

Fast and accurate IGBT model for PSpice

Abstract

Keywords

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