A new PSpice IGBT model is presented which combines existing BJT and MOSFET models and equations to give a more realistic drain-gate capacitance model. Electrical simulation performance gives the accuracy of complex equation based models, but involves the computational time of simple inaccurate model based approaches. Simulation and experimental results vindicate the new model.
|Number of pages||2|
|Publication status||Published - 5 Dec 1996|
- Insulated gate bipolar transistors