Fast and accurate IGBT model for PSpice

K. Sheng, S. J. Finney, B. W. Williams

Research output: Contribution to journalArticle

8 Citations (Scopus)

Abstract

A new PSpice IGBT model is presented which combines existing BJT and MOSFET models and equations to give a more realistic drain-gate capacitance model. Electrical simulation performance gives the accuracy of complex equation based models, but involves the computational time of simple inaccurate model based approaches. Simulation and experimental results vindicate the new model.

Original languageEnglish
Pages (from-to)2294-2295
Number of pages2
JournalElectronics Letters
Volume32
Issue number25
Publication statusPublished - 5 Dec 1996

Keywords

  • Insulated gate bipolar transistors
  • SPICE

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    Sheng, K., Finney, S. J., & Williams, B. W. (1996). Fast and accurate IGBT model for PSpice. Electronics Letters, 32(25), 2294-2295.