Facet-passivation processes for the improvement of Al-containing semiconductor laser diodes

Robert W. Lambert; Tim Ayling; Alec F. Hendry; Joan M. Carson; David A. Barrow; Stuart McHendry; Crawford J. Scott; Andrew McKee; Wyn Meredith

doi:10.1109/JLT.2005.861916

Facet-passivation processes for the improvement of Al-containing semiconductor laser diodes

Robert W. Lambert, Tim Ayling, Alec F. Hendry, Joan M. Carson, David A. Barrow, Stuart McHendry, Crawford J. Scott, Andrew McKee, Wyn Meredith

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

48 Citations (Scopus)

Abstract

The passivation requirements for high-power 980-nm and mid-power 780-nm quantum-well (QW) ridge-waveguide (RWG) Al-containing laser diodes cleaved in air were investigated. In a direct comparison with argon ablation, sulphation, and silicon-barrier-passivation techniques, nitrided facets with a silicon nitride barrier layer exhibited up to an order of magnitude improvement in device lifetime over the next-best method during highly accelerated testing while also maintaining high catastrophic optical damage (COD) or catastrophic optical mirror damage (COMD) thresholds. Well-oxidized facets of 980-nm devices exposed to air for six months were recovered with this process to give reasonable lifetimes (5.66 × 10^-5 h^-1 power degradation) during highly accelerated testing. © 2006 IEEE.

Original language	English
Pages (from-to)	956-961
Number of pages	6
Journal	Journal of Lightwave Technology
Volume	24
Issue number	2
DOIs	https://doi.org/10.1109/JLT.2005.861916
Publication status	Published - Feb 2006

Keywords

AlGaAs
Laser reliability
Passivation
Rb frequency standard
Semiconductor lasers

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10.1109/JLT.2005.861916

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title = "Facet-passivation processes for the improvement of Al-containing semiconductor laser diodes",

abstract = "The passivation requirements for high-power 980-nm and mid-power 780-nm quantum-well (QW) ridge-waveguide (RWG) Al-containing laser diodes cleaved in air were investigated. In a direct comparison with argon ablation, sulphation, and silicon-barrier-passivation techniques, nitrided facets with a silicon nitride barrier layer exhibited up to an order of magnitude improvement in device lifetime over the next-best method during highly accelerated testing while also maintaining high catastrophic optical damage (COD) or catastrophic optical mirror damage (COMD) thresholds. Well-oxidized facets of 980-nm devices exposed to air for six months were recovered with this process to give reasonable lifetimes (5.66 × 10-5 h-1 power degradation) during highly accelerated testing. {\textcopyright} 2006 IEEE.",

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AU - Lambert, Robert W.

AU - Ayling, Tim

AU - Hendry, Alec F.

AU - Carson, Joan M.

AU - Barrow, David A.

AU - McHendry, Stuart

AU - Scott, Crawford J.

AU - McKee, Andrew

AU - Meredith, Wyn

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AB - The passivation requirements for high-power 980-nm and mid-power 780-nm quantum-well (QW) ridge-waveguide (RWG) Al-containing laser diodes cleaved in air were investigated. In a direct comparison with argon ablation, sulphation, and silicon-barrier-passivation techniques, nitrided facets with a silicon nitride barrier layer exhibited up to an order of magnitude improvement in device lifetime over the next-best method during highly accelerated testing while also maintaining high catastrophic optical damage (COD) or catastrophic optical mirror damage (COMD) thresholds. Well-oxidized facets of 980-nm devices exposed to air for six months were recovered with this process to give reasonable lifetimes (5.66 × 10-5 h-1 power degradation) during highly accelerated testing. © 2006 IEEE.

KW - AlGaAs

KW - Laser reliability

KW - Passivation

KW - Rb frequency standard

KW - Semiconductor lasers

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Facet-passivation processes for the improvement of Al-containing semiconductor laser diodes

Abstract

Keywords

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