Facet-passivation processes for the improvement of Al-containing semiconductor laser diodes

Robert W. Lambert, Tim Ayling, Alec F. Hendry, Joan M. Carson, David A. Barrow, Stuart McHendry, Crawford J. Scott, Andrew McKee, Wyn Meredith

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36 Citations (Scopus)

Abstract

The passivation requirements for high-power 980-nm and mid-power 780-nm quantum-well (QW) ridge-waveguide (RWG) Al-containing laser diodes cleaved in air were investigated. In a direct comparison with argon ablation, sulphation, and silicon-barrier-passivation techniques, nitrided facets with a silicon nitride barrier layer exhibited up to an order of magnitude improvement in device lifetime over the next-best method during highly accelerated testing while also maintaining high catastrophic optical damage (COD) or catastrophic optical mirror damage (COMD) thresholds. Well-oxidized facets of 980-nm devices exposed to air for six months were recovered with this process to give reasonable lifetimes (5.66 × 10-5 h-1 power degradation) during highly accelerated testing. © 2006 IEEE.

Original languageEnglish
Pages (from-to)956-961
Number of pages6
JournalJournal of Lightwave Technology
Volume24
Issue number2
DOIs
Publication statusPublished - Feb 2006

Keywords

  • AlGaAs
  • Laser reliability
  • Passivation
  • Rb frequency standard
  • Semiconductor lasers

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    Lambert, R. W., Ayling, T., Hendry, A. F., Carson, J. M., Barrow, D. A., McHendry, S., Scott, C. J., McKee, A., & Meredith, W. (2006). Facet-passivation processes for the improvement of Al-containing semiconductor laser diodes. Journal of Lightwave Technology, 24(2), 956-961. https://doi.org/10.1109/JLT.2005.861916