Abstract
High power RF MEMS switches have been designed and fabricated. The switches are composed of a matrix of ohmic contact cantilevers and bridges. Optimized fabrication processes have been developed to improve planarization on contact surface and reduce residual stress in switch beams, which ensure a reasonable flat and smooth cantilever and membrane bridge for operation at high RF power and low actuation voltage. Crown Copyright © 2006.
| Original language | English |
|---|---|
| Pages (from-to) | 1418-1420 |
| Number of pages | 3 |
| Journal | Microelectronic Engineering |
| Volume | 83 |
| Issue number | 4-9 SPEC. ISS. |
| DOIs | |
| Publication status | Published - Apr 2006 |
Keywords
- Membrane residual stress
- MEMS
- Planarization
- RF switches
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