Fabrication of high power RF MEMS switches

Ling Wang; Zheng Cui; Jia Sheng Hong; Eamon P. McErlean; Robert B. Greed; Daniel C. Voyce

doi:10.1016/j.mee.2006.01.067

Fabrication of high power RF MEMS switches

Ling Wang, Zheng Cui, Jia Sheng Hong, Eamon P. McErlean, Robert B. Greed, Daniel C. Voyce

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

21 Citations (Scopus)

Abstract

High power RF MEMS switches have been designed and fabricated. The switches are composed of a matrix of ohmic contact cantilevers and bridges. Optimized fabrication processes have been developed to improve planarization on contact surface and reduce residual stress in switch beams, which ensure a reasonable flat and smooth cantilever and membrane bridge for operation at high RF power and low actuation voltage. Crown Copyright © 2006.

Original language	English
Pages (from-to)	1418-1420
Number of pages	3
Journal	Microelectronic Engineering
Volume	83
Issue number	4-9 SPEC. ISS.
DOIs	https://doi.org/10.1016/j.mee.2006.01.067
Publication status	Published - Apr 2006

Keywords

Membrane residual stress
MEMS
Planarization
RF switches

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10.1016/j.mee.2006.01.067

Cite this

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title = "Fabrication of high power RF MEMS switches",

abstract = "High power RF MEMS switches have been designed and fabricated. The switches are composed of a matrix of ohmic contact cantilevers and bridges. Optimized fabrication processes have been developed to improve planarization on contact surface and reduce residual stress in switch beams, which ensure a reasonable flat and smooth cantilever and membrane bridge for operation at high RF power and low actuation voltage. Crown Copyright {\textcopyright} 2006.",

keywords = "Membrane residual stress, MEMS, Planarization, RF switches",

author = "Ling Wang and Zheng Cui and Hong, {Jia Sheng} and McErlean, {Eamon P.} and Greed, {Robert B.} and Voyce, {Daniel C.}",

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AU - Wang, Ling

AU - Cui, Zheng

AU - Hong, Jia Sheng

AU - McErlean, Eamon P.

AU - Greed, Robert B.

AU - Voyce, Daniel C.

PY - 2006/4

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AB - High power RF MEMS switches have been designed and fabricated. The switches are composed of a matrix of ohmic contact cantilevers and bridges. Optimized fabrication processes have been developed to improve planarization on contact surface and reduce residual stress in switch beams, which ensure a reasonable flat and smooth cantilever and membrane bridge for operation at high RF power and low actuation voltage. Crown Copyright © 2006.

KW - Membrane residual stress

KW - MEMS

KW - Planarization

KW - RF switches

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DO - 10.1016/j.mee.2006.01.067

M3 - Article

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SP - 1418

EP - 1420

JO - Microelectronic Engineering

JF - Microelectronic Engineering

IS - 4-9 SPEC. ISS.

ER -

Fabrication of high power RF MEMS switches

Abstract

Keywords

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