Fabrication of high power RF MEMS switches

Ling Wang, Zheng Cui, Jia Sheng Hong, Eamon P. McErlean, Robert B. Greed, Daniel C. Voyce

Research output: Contribution to journalArticle

18 Citations (Scopus)


High power RF MEMS switches have been designed and fabricated. The switches are composed of a matrix of ohmic contact cantilevers and bridges. Optimized fabrication processes have been developed to improve planarization on contact surface and reduce residual stress in switch beams, which ensure a reasonable flat and smooth cantilever and membrane bridge for operation at high RF power and low actuation voltage. Crown Copyright © 2006.

Original languageEnglish
Pages (from-to)1418-1420
Number of pages3
JournalMicroelectronic Engineering
Issue number4-9 SPEC. ISS.
Publication statusPublished - Apr 2006


  • Membrane residual stress
  • MEMS
  • Planarization
  • RF switches

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    Wang, L., Cui, Z., Hong, J. S., McErlean, E. P., Greed, R. B., & Voyce, D. C. (2006). Fabrication of high power RF MEMS switches. Microelectronic Engineering, 83(4-9 SPEC. ISS.), 1418-1420. https://doi.org/10.1016/j.mee.2006.01.067