Fabrication of Cu2ZnSnS4 thin film solar cell using single step electrodeposition method

Sambhaji M. Pawar; Bharati S. Pawar; Kishor V. Gurav; Do Won Bae; Se Han Kwon; Sanjay S. Kolekar; Jin Hyeok Kim

doi:10.1143/JJAP.51.10NC27

Fabrication of Cu₂ZnSnS₄ thin film solar cell using single step electrodeposition method

Sambhaji M. Pawar^*, Bharati S. Pawar, Kishor V. Gurav, Do Won Bae, Se Han Kwon, Sanjay S. Kolekar, Jin Hyeok Kim

^*Corresponding author for this work

Research output: Contribution to journal › Article › peer-review

32 Citations (Scopus)

Abstract

Cu₂ZnSnS₄ (CZTS) thin films were deposited onto Mo-coated and tin-doped indium oxide (ITO) coated glass substrates by using single step electrodeposition technique followed by annealing in N₂ + H₂S atmosphere. Subsequently, they were applied to the fabrication of thin film solar cells. Upon annealing, the amorphous nature of as-deposited precursor film changes into polycrystalline kesterite crystal structure with uniform and densely packed surface morphology. Energy dispersive X-ray spectroscopy (EDS) study reveals that the deposited thin films are nearly stoichiometric. Optical absorption study shows the band gap energy of as-deposited CZTS thin films is 2.7 eV whereas, after annealing, it is found to be 1.53 eV. The solar cell fabricated with CZTS absorber layer, showed the best conversion efficiency (ι) 1.21% for 0.44 cm² with open-circuit voltage (V_oc) = 315 mV, short-circuit current density (J_sc) = 12.27 mA/cm ² and fill factor (FF) = 0.31.

Original language	English
Article number	10NC27
Journal	Japanese Journal of Applied Physics
Volume	51
Issue number	10S
DOIs	https://doi.org/10.1143/JJAP.51.10NC27
Publication status	Published - Oct 2012

ASJC Scopus subject areas

Engineering(all)
Physics and Astronomy(all)

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@article{6260502f0c554a0f8f9962ea95d52345,

title = "Fabrication of Cu2ZnSnS4 thin film solar cell using single step electrodeposition method",

abstract = "Cu2ZnSnS4 (CZTS) thin films were deposited onto Mo-coated and tin-doped indium oxide (ITO) coated glass substrates by using single step electrodeposition technique followed by annealing in N2 + H2S atmosphere. Subsequently, they were applied to the fabrication of thin film solar cells. Upon annealing, the amorphous nature of as-deposited precursor film changes into polycrystalline kesterite crystal structure with uniform and densely packed surface morphology. Energy dispersive X-ray spectroscopy (EDS) study reveals that the deposited thin films are nearly stoichiometric. Optical absorption study shows the band gap energy of as-deposited CZTS thin films is 2.7 eV whereas, after annealing, it is found to be 1.53 eV. The solar cell fabricated with CZTS absorber layer, showed the best conversion efficiency (ι) 1.21% for 0.44 cm2 with open-circuit voltage (Voc) = 315 mV, short-circuit current density (Jsc) = 12.27 mA/cm 2 and fill factor (FF) = 0.31.",

author = "Pawar, {Sambhaji M.} and Pawar, {Bharati S.} and Gurav, {Kishor V.} and Bae, {Do Won} and Kwon, {Se Han} and Kolekar, {Sanjay S.} and Kim, {Jin Hyeok}",

year = "2012",

month = oct,

doi = "10.1143/JJAP.51.10NC27",

language = "English",

volume = "51",

journal = "Japanese Journal of Applied Physics",

issn = "0021-4922",

publisher = "Japan Society of Applied Physics",

number = "10S",

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T1 - Fabrication of Cu2ZnSnS4 thin film solar cell using single step electrodeposition method

AU - Pawar, Sambhaji M.

AU - Pawar, Bharati S.

AU - Gurav, Kishor V.

AU - Bae, Do Won

AU - Kwon, Se Han

AU - Kolekar, Sanjay S.

AU - Kim, Jin Hyeok

PY - 2012/10

Y1 - 2012/10

N2 - Cu2ZnSnS4 (CZTS) thin films were deposited onto Mo-coated and tin-doped indium oxide (ITO) coated glass substrates by using single step electrodeposition technique followed by annealing in N2 + H2S atmosphere. Subsequently, they were applied to the fabrication of thin film solar cells. Upon annealing, the amorphous nature of as-deposited precursor film changes into polycrystalline kesterite crystal structure with uniform and densely packed surface morphology. Energy dispersive X-ray spectroscopy (EDS) study reveals that the deposited thin films are nearly stoichiometric. Optical absorption study shows the band gap energy of as-deposited CZTS thin films is 2.7 eV whereas, after annealing, it is found to be 1.53 eV. The solar cell fabricated with CZTS absorber layer, showed the best conversion efficiency (ι) 1.21% for 0.44 cm2 with open-circuit voltage (Voc) = 315 mV, short-circuit current density (Jsc) = 12.27 mA/cm 2 and fill factor (FF) = 0.31.

AB - Cu2ZnSnS4 (CZTS) thin films were deposited onto Mo-coated and tin-doped indium oxide (ITO) coated glass substrates by using single step electrodeposition technique followed by annealing in N2 + H2S atmosphere. Subsequently, they were applied to the fabrication of thin film solar cells. Upon annealing, the amorphous nature of as-deposited precursor film changes into polycrystalline kesterite crystal structure with uniform and densely packed surface morphology. Energy dispersive X-ray spectroscopy (EDS) study reveals that the deposited thin films are nearly stoichiometric. Optical absorption study shows the band gap energy of as-deposited CZTS thin films is 2.7 eV whereas, after annealing, it is found to be 1.53 eV. The solar cell fabricated with CZTS absorber layer, showed the best conversion efficiency (ι) 1.21% for 0.44 cm2 with open-circuit voltage (Voc) = 315 mV, short-circuit current density (Jsc) = 12.27 mA/cm 2 and fill factor (FF) = 0.31.

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DO - 10.1143/JJAP.51.10NC27

M3 - Article

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SN - 0021-4922

VL - 51

JO - Japanese Journal of Applied Physics

JF - Japanese Journal of Applied Physics

IS - 10S

M1 - 10NC27

ER -

Fabrication of Cu₂ZnSnS₄ thin film solar cell using single step electrodeposition method

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