Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44

Xin Yi; Shiyu Xie; Baolai Liang; Leh W. Lim; Diana L. Huffaker; Chee H. Tan; John P. R. David

doi:10.1117/12.2573766

Extremely low-noise avalanche photodiodes based on AlAs_0.56Sb_0.44

Xin Yi, Shiyu Xie, Baolai Liang, Leh W. Lim, Diana L. Huffaker, Chee H. Tan, John P. R. David

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

1 Citation (Scopus)

98 Downloads (Pure)

Abstract

This paper presents the electron and hole avalanche multiplication and excess noise characteristics based on bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes lattice matched to InP, with nominal avalanche region thicknesses of 0.6 -1.5 µm. From these, the bulk electron and hole impact ionization coefficients (a and ß respectively), have been determined over an electric field range of 220-1250 kV/cm for a and from 360-1250 kV/cm for ß for the first time. Excess noise characteristics suggest an ß/a ratio as low as 0.005 for an avalanche region of 1.5 µm in this material, close to the theoretical minimum and significantly lower than AlInAs, InP, or even silicon. This material can be easily integrated with InGaAs for networking and sensing applications, with modeling suggesting that a sensitivity of -32.1 dBm at a bit-error rate (BER) of 1×10-12 at 10 Gb/s at 1550 nm can be realized. This sensitivity can be improved even further by optimizing the dark currents and by using a lower noise transimpedance amplifier.

Original language	English
Title of host publication	Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III
Publisher	SPIE
ISBN (Electronic)	9781510638945
ISBN (Print)	9781510638938
DOIs	https://doi.org/10.1117/12.2573766
Publication status	Published - 13 Oct 2020
Event	SPIE Security + Defence 2020 - Digital Duration: 21 Sept 2020 → 25 Sept 2020 https://spie.org/conferences-and-exhibitions/security-and-defence

Publication series

Name	Proceedings of SPIE
Volume	11540
ISSN (Print)	0277-786X
ISSN (Electronic)	1996-756X

Conference

Conference	SPIE Security + Defence 2020
Period	21/09/20 → 25/09/20
Internet address	https://spie.org/conferences-and-exhibitions/security-and-defence

Keywords

AlAsSb
Avalanche multiplication
Avalanche photodiode
Impact ionization

ASJC Scopus subject areas

Electronic, Optical and Magnetic Materials
Condensed Matter Physics
Computer Science Applications
Applied Mathematics
Electrical and Electronic Engineering

Access to Document

10.1117/12.2573766

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Copyright 2020 Society of Photo‑Optical Instrumentation Engineers (SPIE). One print or electronic copy may be made for personal use only. Systematic reproduction and distribution, duplication of any material in this publication for a fee or for commercial purposes, and modification of the contents of the publication are prohibited. Xin Yi, Shiyu Xie, Baolai Liang, Leh W. Lim, Diana L. Huffaker, Chee H. Tan, and John P. R. David "Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44", Proc. SPIE 11540, Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III, 115400M (13 October 2020); https://doi.org/10.1117/12.2573766
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Cite this

Yi, X., Xie, S., Liang, B., Lim, L. W., Huffaker, D. L., Tan, C. H., & David, J. P. R. (2020). Extremely low-noise avalanche photodiodes based on AlAs_0.56Sb_0.44. In Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III Article 115400M (Proceedings of SPIE; Vol. 11540). SPIE. https://doi.org/10.1117/12.2573766

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title = "Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44",

abstract = "This paper presents the electron and hole avalanche multiplication and excess noise characteristics based on bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes lattice matched to InP, with nominal avalanche region thicknesses of 0.6 -1.5 µm. From these, the bulk electron and hole impact ionization coefficients (a and {\ss} respectively), have been determined over an electric field range of 220-1250 kV/cm for a and from 360-1250 kV/cm for {\ss} for the first time. Excess noise characteristics suggest an {\ss}/a ratio as low as 0.005 for an avalanche region of 1.5 µm in this material, close to the theoretical minimum and significantly lower than AlInAs, InP, or even silicon. This material can be easily integrated with InGaAs for networking and sensing applications, with modeling suggesting that a sensitivity of -32.1 dBm at a bit-error rate (BER) of 1×10-12 at 10 Gb/s at 1550 nm can be realized. This sensitivity can be improved even further by optimizing the dark currents and by using a lower noise transimpedance amplifier.",

keywords = "AlAsSb, Avalanche multiplication, Avalanche photodiode, Impact ionization",

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Yi, X, Xie, S, Liang, B, Lim, LW, Huffaker, DL, Tan, CH & David, JPR 2020, Extremely low-noise avalanche photodiodes based on AlAs_0.56Sb_0.44. in Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III., 115400M, Proceedings of SPIE, vol. 11540, SPIE, SPIE Security + Defence 2020, 21/09/20. https://doi.org/10.1117/12.2573766

Extremely low-noise avalanche photodiodes based on AlAs_0.56Sb_0.44. / Yi, Xin; Xie, Shiyu; Liang, Baolai et al.
Emerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III. SPIE, 2020. 115400M (Proceedings of SPIE; Vol. 11540).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution

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T1 - Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44

AU - Yi, Xin

AU - Xie, Shiyu

AU - Liang, Baolai

AU - Lim, Leh W.

AU - Huffaker, Diana L.

AU - Tan, Chee H.

AU - David, John P. R.

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N2 - This paper presents the electron and hole avalanche multiplication and excess noise characteristics based on bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes lattice matched to InP, with nominal avalanche region thicknesses of 0.6 -1.5 µm. From these, the bulk electron and hole impact ionization coefficients (a and ß respectively), have been determined over an electric field range of 220-1250 kV/cm for a and from 360-1250 kV/cm for ß for the first time. Excess noise characteristics suggest an ß/a ratio as low as 0.005 for an avalanche region of 1.5 µm in this material, close to the theoretical minimum and significantly lower than AlInAs, InP, or even silicon. This material can be easily integrated with InGaAs for networking and sensing applications, with modeling suggesting that a sensitivity of -32.1 dBm at a bit-error rate (BER) of 1×10-12 at 10 Gb/s at 1550 nm can be realized. This sensitivity can be improved even further by optimizing the dark currents and by using a lower noise transimpedance amplifier.

AB - This paper presents the electron and hole avalanche multiplication and excess noise characteristics based on bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes lattice matched to InP, with nominal avalanche region thicknesses of 0.6 -1.5 µm. From these, the bulk electron and hole impact ionization coefficients (a and ß respectively), have been determined over an electric field range of 220-1250 kV/cm for a and from 360-1250 kV/cm for ß for the first time. Excess noise characteristics suggest an ß/a ratio as low as 0.005 for an avalanche region of 1.5 µm in this material, close to the theoretical minimum and significantly lower than AlInAs, InP, or even silicon. This material can be easily integrated with InGaAs for networking and sensing applications, with modeling suggesting that a sensitivity of -32.1 dBm at a bit-error rate (BER) of 1×10-12 at 10 Gb/s at 1550 nm can be realized. This sensitivity can be improved even further by optimizing the dark currents and by using a lower noise transimpedance amplifier.

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