Extremely low-noise avalanche photodiodes based on AlAs0.56Sb0.44

Xin Yi, Shiyu Xie, Baolai Liang, Leh W. Lim, Diana L. Huffaker, Chee H. Tan, John P. R. David

Research output: Chapter in Book/Report/Conference proceedingConference contribution

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Abstract

This paper presents the electron and hole avalanche multiplication and excess noise characteristics based on bulk AlAs0.56Sb0.44 p-i-n and n-i-p homojunction diodes lattice matched to InP, with nominal avalanche region thicknesses of 0.6 -1.5 µm. From these, the bulk electron and hole impact ionization coefficients (a and ß respectively), have been determined over an electric field range of 220-1250 kV/cm for a and from 360-1250 kV/cm for ß for the first time. Excess noise characteristics suggest an ß/a ratio as low as 0.005 for an avalanche region of 1.5 µm in this material, close to the theoretical minimum and significantly lower than AlInAs, InP, or even silicon. This material can be easily integrated with InGaAs for networking and sensing applications, with modeling suggesting that a sensitivity of -32.1 dBm at a bit-error rate (BER) of 1×10-12 at 10 Gb/s at 1550 nm can be realized. This sensitivity can be improved even further by optimizing the dark currents and by using a lower noise transimpedance amplifier.

Original languageEnglish
Title of host publicationEmerging Imaging and Sensing Technologies for Security and Defence V; and Advanced Manufacturing Technologies for Micro- and Nanosystems in Security and Defence III
PublisherSPIE
ISBN (Electronic)9781510638945
ISBN (Print)9781510638938
DOIs
Publication statusPublished - 13 Oct 2020
EventSPIE Security + Defence 2020 - Digital
Duration: 21 Sep 202025 Sep 2020
https://spie.org/conferences-and-exhibitions/security-and-defence

Publication series

NameProceedings of SPIE
Volume11540
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSPIE Security + Defence 2020
Period21/09/2025/09/20
Internet address

Keywords

  • AlAsSb
  • Avalanche multiplication
  • Avalanche photodiode
  • Impact ionization

ASJC Scopus subject areas

  • Electronic, Optical and Magnetic Materials
  • Condensed Matter Physics
  • Computer Science Applications
  • Applied Mathematics
  • Electrical and Electronic Engineering

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