Extended Point Defects in Crystalline Materials: Ge and Si

N. E. B. Cowern; S. Simdyankin; C. Ahn; N. S. Bennett; J. P. Goss; J.-m. Hartmann; A. Pakfar; S. Hamm; J. Valentin; E. Napolitani; D. De Salvador; E. Bruno; S. Mirabella

doi:10.1103/PhysRevLett.110.155501

Extended Point Defects in Crystalline Materials: Ge and Si

N. E. B. Cowern
, S. Simdyankin
, C. Ahn
, N. S. Bennett
, J. P. Goss
, J.-m. Hartmann
, A. Pakfar
, S. Hamm
, J. Valentin
, E. Napolitani
, D. De Salvador
, E. Bruno
, S. Mirabella

School of Engineering & Physical Sciences

Research output: Contribution to journal › Article › peer-review

36 Citations (Scopus)

229 Downloads (Pure)

Original language	English
Article number	155501
Number of pages	5
Journal	Physical Review Letters
Volume	110
Issue number	15
DOIs	https://doi.org/10.1103/PhysRevLett.110.155501
Publication status	Published - 8 Apr 2013

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10.1103/PhysRevLett.110.155501

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title = "Extended Point Defects in Crystalline Materials: Ge and Si",

author = "Cowern, \{N. E. B.\} and S. Simdyankin and C. Ahn and Bennett, \{N. S.\} and Goss, \{J. P.\} and J.-m. Hartmann and A. Pakfar and S. Hamm and J. Valentin and E. Napolitani and \{De Salvador\}, D. and E. Bruno and S. Mirabella",

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T1 - Extended Point Defects in Crystalline Materials: Ge and Si

AU - Cowern, N. E. B.

AU - Simdyankin, S.

AU - Ahn, C.

AU - Bennett, N. S.

AU - Goss, J. P.

AU - Hartmann, J.-m.

AU - Pakfar, A.

AU - Hamm, S.

AU - Valentin, J.

AU - Napolitani, E.

AU - De Salvador, D.

AU - Bruno, E.

AU - Mirabella, S.

PY - 2013/4/8

Y1 - 2013/4/8

U2 - 10.1103/PhysRevLett.110.155501

DO - 10.1103/PhysRevLett.110.155501

M3 - Article

SN - 0031-9007

VL - 110

JO - Physical Review Letters

JF - Physical Review Letters

IS - 15

M1 - 155501

ER -