Extended Point Defects in Crystalline Materials: Ge and Si

N. E. B. Cowern, S. Simdyankin, C. Ahn, N. S. Bennett, J. P. Goss, J.-m. Hartmann, A. Pakfar, S. Hamm, J. Valentin, E. Napolitani, D. De Salvador, E. Bruno, S. Mirabella

Research output: Contribution to journalArticle

28 Citations (Scopus)
157 Downloads (Pure)
Original languageEnglish
Article number155501
Number of pages5
JournalPhysical Review Letters
Volume110
Issue number15
DOIs
Publication statusPublished - 8 Apr 2013

Cite this

Cowern, N. E. B., Simdyankin, S., Ahn, C., Bennett, N. S., Goss, J. P., Hartmann, J., Pakfar, A., Hamm, S., Valentin, J., Napolitani, E., De Salvador, D., Bruno, E., & Mirabella, S. (2013). Extended Point Defects in Crystalline Materials: Ge and Si. Physical Review Letters, 110(15), [155501]. https://doi.org/10.1103/PhysRevLett.110.155501