Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperatures

M. A. Leontiadou, K. L. Litvinenko, A. M. Gilbertson, C. R. Pidgeon, W. R. Branford, L. F. Cohen, M. Fearn, T. Ashley, M. T. Emeny, B. N. Murdin, S. K. Clowes

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Abstract

We report the optical measurement of the spin dynamics at elevated temperatures and in zero magnetic field for two types of degenerately doped n-InSb quantum wells (QWs), one asymmetric (sample A) and one symmetric (sample B) with regards to the electrostatic potential across the QW. Making use of three directly determined experimental parameters: the spin lifetime, ts, the sheet carrier concentration, n, and the electron mobility, µ, we directly extract the zero-field spin splitting. For the asymmetric sample where the Rashba interaction is the dominant source of spin splitting, we deduce a room temperature Rashba parameter of a = 0.09 ±0.1 eV A which is in good agreement with calculations and we estimate the Rashba coefficient a0 (a figure of merit for the ease with which electron spins can be modulated via an electric field). We review the merits/limitations of this approach and the implications of our findings for spintronic devices. © 2011 IOP Publishing Ltd.

Original languageEnglish
Article number035801
JournalJournal of Physics: Condensed Matter
Volume23
Issue number3
DOIs
Publication statusPublished - 26 Jan 2011

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    Leontiadou, M. A., Litvinenko, K. L., Gilbertson, A. M., Pidgeon, C. R., Branford, W. R., Cohen, L. F., Fearn, M., Ashley, T., Emeny, M. T., Murdin, B. N., & Clowes, S. K. (2011). Experimental determination of the Rashba coefficient in InSb/InAlSb quantum wells at zero magnetic field and elevated temperatures. Journal of Physics: Condensed Matter, 23(3), [035801]. https://doi.org/10.1088/0953-8984/23/3/035801