Experimental demonstration of titanium nitride plasmonic interconnects

N. Kinsey, M. Ferrera, G. V. Naik, V. E. Babicheva, V. M. Shalaev, A. Boltasseva

Research output: Contribution to journalArticle

64 Citations (Scopus)

Abstract

An insulator-metal-insulator plasmonic interconnect using TiN, a CMOS-compatible material, is proposed and investigated experimentally at the telecommunication wavelength of 1.55 mu m. The TiN waveguide was shown to obtain propagation losses less than 0.8 dB/mm with a mode size of 9.8 mu m on sapphire, which agree well with theoretical predictions. A theoretical analysis of a solid-state structure using Si3N4 superstrates and ultra-thin metal strips shows that propagation losses less than 0.3 dB/mm with a mode size of 9 mu m are attainable. This work illustrates the potential of TiN as a realistic plasmonic material for practical solid-state, integrated nano-optic and hybrid photonic devices. (C) 2014 Optical Society of America

Original languageEnglish
Pages (from-to)12238-12247
Number of pages10
JournalOptics Express
Volume22
Issue number10
DOIs
Publication statusPublished - 19 May 2014

Keywords

  • POLARITON WAVE-GUIDES
  • TELECOMMUNICATION WAVELENGTHS
  • DIELECTRIC FUNCTION
  • POLYMER
  • PROPAGATION
  • EXCITATION
  • DEPOSITION
  • COMPONENTS
  • MODULATOR
  • SILVER

Cite this