Abstract
Magnetic field and temperature dependent measurements are used to study the excitonic properties of high quality ZnSe quantum wells in MgS barriers grown by molecular beam epitaxy. The small inhomogeneous broadening of the samples allows the observation of higher excited exciton states. Due to the large difference in band gap between ZnSe and MgS a value of 43.9 meV was measured for the exciton binding energy which is the largest reported for this material system. The full width at half maximum of the heavy hole transitions is measured as a function of temperature and the broadening of the excitonic transitions in narrow quantum wells is reduced compared to the ZnSe bulk value due to the expected reduction in the LO-phonon scattering. © 2000 American Institute of Physics.
| Original language | English |
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| Pages (from-to) | 3755-3757 |
| Number of pages | 3 |
| Journal | Applied Physics Letters |
| Volume | 77 |
| Issue number | 23 |
| Publication status | Published - 4 Dec 2000 |