The variable-phase approach is applied to scattering and bound states in screened Coulomb potentials in three- and two-dimensions to study the excitons and free carriers in wide-gap semiconductors. The treatment of bound states allows for the estimation of distribution of electron-hole pairs between correlated and free carrier states. The carrier densities and temperatures are limited to the Boltzmann regime and the difference between the electron and hole masses are neglected. The approximations allow a much clearer distinction between carriers residing in correlated pair states and quasi-free states.
|Title of host publication||Proceedings of the 1998 International Quantum Electronics Conference|
|Publication status||Published - 1998|
|Event||1998 International Quantum Electronics Conference - San Francisco, CA, USA|
Duration: 3 May 1998 → 8 May 1998
|Conference||1998 International Quantum Electronics Conference|
|City||San Francisco, CA, USA|
|Period||3/05/98 → 8/05/98|