Exciton/free carrier plasma in wide-gap semiconductors

M. E. Portnoi, I. Galbraith

Research output: Chapter in Book/Report/Conference proceedingConference contribution

Abstract

The variable-phase approach is applied to scattering and bound states in screened Coulomb potentials in three- and two-dimensions to study the excitons and free carriers in wide-gap semiconductors. The treatment of bound states allows for the estimation of distribution of electron-hole pairs between correlated and free carrier states. The carrier densities and temperatures are limited to the Boltzmann regime and the difference between the electron and hole masses are neglected. The approximations allow a much clearer distinction between carriers residing in correlated pair states and quasi-free states.

Original languageEnglish
Title of host publicationProceedings of the 1998 International Quantum Electronics Conference
Pages58-
Publication statusPublished - 1998
Event1998 International Quantum Electronics Conference - San Francisco, CA, USA
Duration: 3 May 19988 May 1998

Conference

Conference1998 International Quantum Electronics Conference
CitySan Francisco, CA, USA
Period3/05/988/05/98

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